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  • 1
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    Effects of environmental change on ecosystem services in the Southern Ocean: the role of pelagic cephalopods in the context of potential future commercial exploitation (2014)
    In:  EPIC3SCAR 2014 Open Science Conference, Auckland, New Zealand, 2014-08-23-2014-09-03
    Details
    Publication Date: 2014-09-08
    Repository Name: EPIC Alfred Wegener Institut
    Type: Conference , notRev
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  • 2
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    Effects of ozone cooling in the tropical lower stratosphere and upper troposphere (2007)
    In:  EPIC3Geophysical Research Letters. 34, L23813
    Details
    Publication Date: 2019-07-17
    Description: In this paper, we examine the tropical lower stratosphere and upper troposphere and elucidate the key role of ozone changes in driving temperature trends in this region. We use a radiative fixed dynamical heating model to show that the effects of tropical ozone decreases at 70 hPa and lower pressures can lead to significant cooling not only at stratospheric levels, but also in the sub-stratosphere/upper tropospheric region around 15070 hPa. The impact of stratospheric ozone depletion on upper tropospheric temperatures stems from reduced longwave emission from above. The results provide a possible explanation for the long-standing discrepancy between modeled and measured temperature trends in the uppermost tropical troposphere and can explain the latitudinal near-homogeneity of recent stratospheric temperature trends.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 3
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    Applications of proxy system modeling in high resolution paleoclimatology (2013)
    Elsevier B.V.
    Details
    Publication Date: 2022-05-25
    Description: © The Author(s), 2013. This article is distributed under the terms of the Creative Commons Attribution License. The definitive version was published in Quaternary Science Reviews 76 (2013): 16-28, doi:10.1016/j.quascirev.2013.05.024.
    Description: A proxy system model may be defined as the complete set of forward and mechanistic processes by which the response of a sensor to environmental forcing is recorded and subsequently observed in a material archive. Proxy system modeling complements and sharpens signal interpretations based solely on statistical analyses and transformations; provides the basis for observing network optimization, hypothesis testing, and data-model comparisons for uncertainty estimation; and may be incorporated as weak but mechanistically-plausible constraints into paleoclimatic reconstruction algorithms. Following a review illustrating these applications, we recommend future research pathways, including development of intermediate proxy system models for important sensors, archives, and observations; linking proxy system models to climate system models; hypothesis development and evaluation; more realistic multi-archive, multi-observation network design; examination of proxy system behavior under extreme conditions; and generalized modeling of the total uncertainty in paleoclimate reconstructions derived from paleo-observations.
    Description: MNE and DMT were funded by NOAA/C2D2 grant NA10OAR4310115; SETW gratefully acknowledges support from an American Association of UniversityWomen Dissertation Fellowship. Work cited in this review was supported by NSF grants 0349356, 0724802 and 0902715, NOAA grants NA06OAR4310115 and NA08OAR4310682, and the University of Arizona’s Department of Geosciences and Institute of the Environment.
    Keywords: Forward modeling ; Observational network optimization ; Data-model comparison ; Hypothesis evaluation ; Reconstruction ; Uncertainty modeling
    Repository Name: Woods Hole Open Access Server
    Type: Article
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  • 4
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    III. The Hydroid Zoophytes of the \xe2\x80\x9eWillem Barents\xe2\x80\x9d Expedition, 1881 (1884)
    In:  Bijdragen tot de dierkunde vol. 10 no. 1, pp. 1-10
    Details
    Publication Date: 2024-01-12
    Description: The collection of Hydroidea obtained by this Expedition, was forwarded to me for examination in the summer of 1882, by Dr. MAX WEBER, of Amsterdam. I have found no new species in it, \xe2\x80\x94 a natural result of the number of Scandinavian and Arctic Hydroids that have been made known to us in late years, by MM. M. and G. O. SARS, ALLMAN, HINCKS, METSCHNIKOFF and others. But the present collection contains several species hitherto rare, it extends greatly the range of many that have formerly been reported from only one or two localities, and it contains also several well marked and peculiar varieties. It includes altogether 24 species from 12 stations, from various depths down to 170 fathoms. The annexed table gives the names of the species with the stations and depths at which they were found.\nThe most prominent and luxuriant species are Sertularia gigantea, and Lafo\xc3\xaba fruticosa; \xe2\x80\x94 of which the former is common everywhere in shallow, the latter in deep water; most of the species are large and strong in comparison with specimens from farther south.
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
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  • 5
    Electronic Resource
    Electronic Resource
    Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 765-770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band gap modification in Ne+-ion implanted In1−xGaxAs/InP (x=0.25, 0.33, 0.40, 0.47, 0.54, 0.61, 0.69) and InAsyP1−y/InP (y=0.32) quantum well structures has been studied by low temperature (12 K) photoluminescence spectra. The maximum usable high temperature anneal for inducing the compositional intermixing using an InP proximity cap is found to be ∼700 °C for 13 s. A second low-temperature (300 °C) anneal, following the high-temperature (700 °C) anneal, is found to induce greater band gap changes than the simple one-step anneal at 700 °C. The changes are found to be approximately proportional to the difference of bandgap energy between the well and the barrier materials; the proportionality coefficient increases with ion dose and reaches a maximum at a dose of ∼2×1013 cm−2. At higher doses, the proportionality coefficient decreases. The band gap changes are explained qualitatively based on the InGaAsP binary composition diagram. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364440
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  • 6
    Electronic Resource
    Electronic Resource
    Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3021-3027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of the group V components in In1−xGaxAsyP1−y, grown lattice matched to InP by gas source molecular beam epitaxy, has been studied over the entire alloy range, 0≤y≤1, as a function of the group V source composition, the V/III beam flux ratio, and the substrate surface orientation. Several aspects of the group V incorporation are most easily understood in terms of a simple model involving a constant incorporation coefficient and an As "underpressure'' condition. An improved description of the results at lower values of the V/III flux ratio is provided by a thermodynamic model based on equilibrium reactions for the formation of the binary constituents, and using the bulk properties of the solid solution. However, the thermodynamic model is quantitatively incorrect for large values of the V/III flux ratio. Furthermore, the results for different surface orientations reveal additional weaknesses in the thermodynamic model and suggest the need to account for the surface bonding configurations in describing the group V incorporation in epitaxial growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361241
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  • 7
    Electronic Resource
    Electronic Resource
    Strain-induced electrically active stoichiometric defects in InAsyP1−y deposited onto (100) InP by gas-source molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4032-4039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsyP1−y epilayers were deposited by gas-source molecular beam epitaxy onto (100) InP, systematically varying the As fraction from 0.15 to 0.75, corresponding to a lattice mismatch of 0.5%–2.4%. Thin (≈190 A(ring)), largely strained InAsyP1−y films exhibit a smooth, planar morphology and good photoluminescence characteristics even for strains exceeding 2%. In thicker films, depending on the growth parameters, capacitance-voltage depth profiling indicates a strain and thickness dependent formation of electrically active defects that results in a net ionized donor concentration with a peak value as high as 2×1019 cm−3 after about 500 A(ring) of growth. Corresponding photoluminescence measurements suggest that these defects are associated with a shallow level about 10 meV below the conduction band edge of the InAsyP1−y. As the thickness further increases, the net residual donor concentration reduces to 〈3×1015 cm−3 near the top surface of 1.2-μm-thick epilayers with y≤0.6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356026
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3378-3381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation into Si-doped InP grown by gas-source molecular beam epitaxy was studied. P-H sites were identified by infrared spectroscopy. Proton-implanted reference samples were used to quantify the infrared results. Approximately 0.1 at. % hydrogen was found to be incorporated into InP:Si. Hall measurements indicated that most of the Si atoms were electrically active as donors. Rapid thermal annealing at 600 °C removed most of the bonded hydrogen from the samples. However, this resulted in relatively little change in either the room-temperature free-carrier concentration or Hall mobility. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358626
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of p-type InGaAsP and InGaAs irradiated with He+ and N+ (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5580-5583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: He+ and N+ ion irradiation of epitaxial p-type In0.76Ga0.24As0.58P0.42 and In0.53Ga0.47As was performed at 300 K to obtain high-resistivity regions. In both the ternary and quaternary samples the resistivity first increases with ion dose. A maximum is reached at a critical dose depending on the ion species and initial doping concentration. Above this dose the conductivity converts to n type and the resistivity steadily decreases to ∼102 Ω cm in InGaAsP and ∼2 Ω cm in InGaAs. After thermal annealing the type converted samples revert to p type. However, for ion doses ≥1013 cm−2 the high resistivities remain stable up to 700 K. The results suggest that simple point defects, rather than complexes are responsible for the changes in the electrical properties of the samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359199
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  • 10
    Electronic Resource
    Electronic Resource
    Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5167-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal desorption of ultraviolet-ozone oxide on InP substrates prepared for molecular-beam epitaxy has been performed with overpressures of P2, As2, and As4. Surface analysis using reflection high-energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy and thermodynamic calculations indicate that thermal desorption proceeds via a reaction between the oxide and atomic phosphorus from the substrate to produce volatile phosphorus oxides such as P2O3. The overpressure species serves to stabilize the substrate against surface dissociation once the oxide is removed. In the case of an arsenic overpressure the desorption of the final monolayer of oxide is slowed, relative to the case of phosphorus overpressure, due to the formation of InAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359262
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