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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 561-565 (Oct. 2007), p. 199-202 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The lightest density of Mg has stimulated renewed interest in Mg based alloys forapplications in the automotive, aerospace and communications industries. However, Mg in the pureform has relatively low strength, limited ductility and is susceptible to corrosion. Great efforts havebeen made to improve the mechanical properties of Mg alloys. Alloying Mg with other elements isone of the most important methods. An important class of Mg alloys is the Mg-Zn-RE system (RE =rare earth elements). In recent few decades, a series of new Mg-Zn-RE system alloys have beenobtained, and detailed the structure and mechanical properties of the alloys. In this paper, the structureand mechanical properties of the Mg-Zn-RE alloys have been summarized. It showed that these alloyshave high strength and they are prospected to be widely used in the future
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 4859-4861 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ultrafast dephasing in an intermediate case of molecular radiationless transition has been visualized for the first time by femtosecond time-resolved photoelectron imaging. The decay of photoexcited S1(n,π*) state of pyrazine in 100 ps and the corresponding build-up of triplet states were clearly observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6965-6971 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a time-resolved study of carrier recombination dynamics of broadband light emitting diode structures comprised of a series of InGaAs/InGaAlAs digital pseudoalloy short period superlattices fabricated by molecular beam epitaxy. The structure consists of three quantum wells equally spaced in emission energy over the 1.3–1.8 μm range. We performed a time-resolved study of carrier recombination process for each quantum well using optical pumping. Experimental results show that carrier tunneling across adjacent wells plays a major role in the overall carrier population distribution across the three wells. By tailoring the thicknesses of barriers and wells of the structure, uniform spectral emission covering 1.3–1.8 μm range can be achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6923-6935 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial resolution of optically addressed spatial light modulators (OASLMs) is degraded by several different transfer processes in these devices. We have developed a general transient charge transport model to calculate and simulate the resolution limits of OASLMs due to the following charge spreading mechanisms during the transfer process in which the input image is converted into a particular charge distribution in the photosensor layer. (i) The effect of charge drift in the photosensor bulk on resolution increases with the thickness of the photosensor and the light-modulating layers. It also increases with the total amount of photogenerated charge collected at the interface. (ii) The effect of charge diffusion in the photosensor bulk on resolution is largely independent of the carrier mobility in the semiconductor photosensor. In most cases the corresponding spatial frequency f50% is proportional to (square root of)Vsc/dsc, where dsc is the photosensor thickness and Vsc is the voltage drop in that layer. To have high-sensitivity OASLMs the transit time of charge carriers from the photosensor bulk to the interface must be much shorter than the recombination lifetime. (iii) The effects that charge drift, diffusion, and trapping at the photosensor-light-modulating layer interface have on resolution depend strongly on the interface properties. Decreasing the mobility or the trapping time of charge carriers at the interface can dramatically improve the resolution of OASLMs. The resolution ranges from 3 to 875 line pairs/mm for respective diffusion lengths of 10 to 0.1 μm at the interface. The combined effect on resolution from each of the charge spreading and other resolution-degrading mechanisms is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1643-1649 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study is described of the impact process and the corresponding surface damage to PMMA (polymethylmethacrylate) targets impacted by ice and nylon spheres. A gas gun system was used to project the spheres and the impacts were recorded using a high-speed image converter camera (Imacon 792). Special attention was paid to the conditions causing projectile failure and the surface damage to the target. The experimental results show that although the deformation and failure modes for ice and nylon are different, the surface damage to the PMMA target has a similar failure pattern, i.e., a central, circular undamaged region surrounded by an annular damaged region containing many short circumferential cracks. Analysis shows that the diameter d of the central undamaged region and the annular damaged area Am can be used to characterize the surface damage which depends on the projectile material, sphere radius R, as well as the impact velocity V0. For a given projectile, two critical impact velocities exist: One is the threshold velocity (V0)th, below which no visible surface damage is observed, and another is the fracture velocity (V0)f, above which a plate target is broken. Damage in the annular region is caused by the Rayleigh surface wave in the present experiments. The conditions for the Rayleigh surface wave to pass ahead of the expanding edge contact velocity are analyzed. Comparisons between the theoretical predictions and experimental results, including the present study and earlier data, are made for PMMA plates impacted by projectiles of different materials (ice, nylon spheres, and water drops) and at different impact angles. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 15 (1982), S. 880-882 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 24 (1991), S. 5535-5538 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 24 (1991), S. 6653-6659 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5383-5388 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The continuous reduction of head–disk spacing has made the use of supersmooth media a necessity in gaining ultrahigh magnetic recording areal density. To overcome the stiction barrier associated with supersmooth disks without compromising the head flyability requirement, texture features can be transferred from the disk surface to the slider surface, creating a new type of head–disk interface, the padded slider interface. The tribology of a padded slider interface is in many ways different from that of the traditional head–disk interface with texture on the disk only. In this article, various unique tribological aspects of the padded slider interface are discussed in detail. Both theoretical modeling results and experimental data are presented to elucidate the stiction, friction, and wear behaviors of this novel head–disk interface. It is shown that the padded slider technology offers a viable alternative to the ramp load technology as a head–disk interface solution for the ultrahigh areal density. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 93-96 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A small-area high-Tc superconducting bolometer with a dense YBCO meander wire on a (100) Zr(Y)O2 substrate has been tested at λ=1.5 μm using a diode laser as the radiation source. The infrared power absorbed by the bolometer was calibrated using a dc infrared substitution method. Responsivities of hundreds of V/W with a millisecond response time were obtained at a temperature of 86.5 K in the modulation frequency range of 10–3000 Hz. A minimum noise equivalent power of 6×10−11 W/Hz1/2 was measured at 1000 Hz. The experimental results are compared with those obtained from a thermal analysis of the substrate-supported microbolometer. No nonbolometric effect was distinguished.
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