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  • 11
    Electronic Resource
    Electronic Resource
    Copper oxide superconductors Sharp-mode coupling in high- T c superconductors (2004)
    [s.l.] : Nature Publishing Group
    Nature 432 (2004), S. 0 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Arising from: J. Hwang, T. Timusk & G. D. Gu Nature 427, 714–717 (2004); Hwang et al. replyIn conventional superconductivity, sharp phonon modes (oscillations in the crystal lattice) are ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature03163
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  • 12
    Electronic Resource
    Electronic Resource
    High-temperature superconductors Universal nodal Fermi velocity (2003)
    [s.l.] : Nature Publishing Group
    Nature 423 (2003), S. 398-398 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The mechanism that causes high-temperature superconductivity in copper oxide materials (cuprates) is still unknown, more than 15 years after it was discovered. As the charge carriers (electrons or holes) are introduced into the parent antiferromagnetic insulator, a process called doping, the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/423398a
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  • 13
    Electronic Resource
    Electronic Resource
    Evidence for ubiquitous strong electron–phonon coupling in high-temperature superconductors (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 412 (2001), S. 510-514 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Coupling between electrons and phonons (lattice vibrations) drives the formation of the electron pairs responsible for conventional superconductivity. The lack of direct evidence for electron–phonon coupling in the electron dynamics of the high-transition-temperature superconductors has ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35087518
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  • 14
    Electronic Resource
    Electronic Resource
    Surface structure of Bi2Sr2CaCu2O8+δ high-temperature superconductors studied using low-energy electron diffraction (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2563-2565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface structure of Bi2Sr2CaCu2O8+δ has been studied using low-energy electron diffraction (LEED). Sharp diffraction spots indicative of a well-ordered surface are observed. The LEED patterns unequivocally show that this type of material preferentially cleaves along the a-b planes of the nearly tetragonal unit cell. A superstructure extending along one of the axes in the a-b plane (b) is found to have a periodicity of 27±0.5 A(ring), in good agreement with earlier studies of the three-dimensional crystal structure. We conclude that the superstructure at the surface is nonlocal in character and reflects the long-range superlattice of the bulk along the b axis. Intensity modulations of the diffraction spots oriented along the b axis are also reported and discussed in terms of the cell dimension of the unit cell along the b axis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100532
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  • 15
    Electronic Resource
    Electronic Resource
    Interface structure and perpendicular magnetic anisotropy in Pt/Co multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3953-3959 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt/Co multilayers sputter-deposited in Ar and Xe ambients, and periodic multilayers composed of specific combinations of Pt, Pd, and Co layers, were grown to study the effects of energetic backscattered Ar neutrals on the interface structure. The effects were correlated with the magnetic and magneto-optical properties with emphasis on the perpendicular magnetic anisotropy, K⊥. Films were characterized by high-resolution transmission electron microscopy, x-ray diffraction including grazing incidence geometry, and magnetic circular x-ray dichroism techniques as well as by standard magnetic and magneto-optic methods. It is found that the perpendicular magnetic anisotropy is extremely sensitive to the degree of intermixing, sharp interfaces yielding the largest anisotropy. The three to fourfold difference in K⊥ found between Ar and Xe sputtered films can be directly correlated to the magnitude of the orbital moment contribution 〈LZ〉 in the Co. This orbital contribution is found to be strongly sensitive to the interface sharpness in the films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358577
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  • 16
    Electronic Resource
    Electronic Resource
    Magnetism of ultrathin films of Fe on Cu(100) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5209-5211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetism in ultrathin (1–10 ML) Fe films grown on Cu(100) has been studied by spin-polarized secondary electron emission spectroscopy. The variation of the magnetization with temperature and oxygen adsorption was investigated for various film thicknesses. The orientation of the magnetization for films between 5 and 6 ML thick switches reversibly between perpendicular (at low temperature) to in-plane (at high temperature). The switching transition temperature decreases with increasing film thickness, and is accompanied by a loss of long-range order over a range of 20–30 K. The transition is attributed to the temperature dependence of the perpendicular anisotropy. The effect of oxygen adsorption onto films with perpendicular remanence is to first suddenly turn the magnetization into the plane at a critical coverage, and then to kill the magnetization gradually with continued exposure. This indicates that the uniaxial surface anisotropy at the Fe-vacuum interface plays a major role in the magnetization of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348077
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  • 17
    Electronic Resource
    Electronic Resource
    Interaction of overlayers of Al and Rb with single-crystalline surfaces of Bi2Sr2CaCu2O8 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2667-2670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission results from Al and Rb interfaces with single crystals of Bi2Sr2CaCu2O8 high-temperature superconductors are reported. The Al and Rb adsorbates are found to react quite differently with the Bi2Sr2CaCu2O8 substrate. While adatoms of Rb significantly affect only the Bi and O atoms in the top atomic layer, the Al adsorbate profoundly disrupts the bonding character of the whole Bi2Sr2CaCu2O8 material. For Al, the Bi and Cu states are strongly reduced, and the Sr and O states show evidence of oxidized components. In addition, Al causes a strong out-diffusion of oxygen from the bulk. The differences in the reactivity of Al and Rb are discussed in terms of the different mobility of the two atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345480
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  • 18
    Electronic Resource
    Electronic Resource
    Preparation of cantilevered W tips for atomic force microscopy and apertureless near-field scanning optical microscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 2942-2947 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Tip characteristics play an important role in the resolution and sensitivity of scanning probe microscopy. Extensive efforts have been devoted to tip fabrication. Most of the research is focused on scanning tunneling microscopy applications, which require sharp and short tips. Long tips that can be bent into cantilevered tips have great potential in atomic force microscopy/apertureless near-field scanning optical microscopy applications. However, the fabrication of such tips has been rarely reported. The present work is carried out with the aim of optimizing the conditions suitable for fabricating long and sharp tungsten tips. Besides topography, optical, and spectroscopic information, electrical and magnetic measurements can also be carried out with such tips obtained with the recipe reported in this article. The long tips also make it possible to measure deep grooves/trenches. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494867
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  • 19
    Electronic Resource
    Electronic Resource
    Micro-Raman and photoluminescence investigation of ZnxCd1−xSe thin film under high pressure (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5198-5201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micro-Raman and photoluminescence (PL) studies of a ZnxCd1−xSe (x=0.68) thin film sample have been carried out under high pressure at room temperature. In the PL spectra, the PL energy gap shift exhibits sublinearity with pressure and a least-square fitting to the experimental data gives pressure coefficients of α=0.082 eV/GPa and β=−0.0052 eV/GPa2. The second-order pressure coefficient β of the energy gap obtained experimentally is anomalously large and its origin was explained by alloy potential fluctuation with increasing pressure. From the Raman spectra, the first-order pressure coefficient was also calculated using least-square fitting. The low energy tail of the longitudinal-optical phonon was found to develop with pressure and the line shape change with pressure is interpreted in terms of a "spatial correlation" model. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368771
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  • 20
    Electronic Resource
    Electronic Resource
    Temperature dependence of Raman scattering in hexagonal gallium nitride films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3332-3337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First-order Raman scattering of hexagonal GaN single crystal films deposited on sapphire substrate by low pressure metal organic chemical vapor deposition is studied between 78 and 870 K. The temperature dependence of the five GaN Raman modes is obtained. Both the linewidth and Raman shift exhibit a quadratic dependence on temperature in our measured temperature range. Excellent agreement was found between the experiment data and calculated results based on a model involving three- and four-phonon coupling. Our results indicate it is necessary to include the contributions of both the thermal expansion and four-phonon terms in the four-phonon anharmonic processes to explain the change of Raman shift and linewidth with temperature. In addition, a decrease in the splitting between the longitudinal optical and transverse optical phonons with increasing temperature was also observed. From these data a weak nonlinear decrease of the transverse effective charge with increasing temperature is derived. The comparison of the transverse effective charge eT* at room temperature was made between experimental data and theoretical calculations by a pseudopotential expression and bond orbital model. Good agreement between theory and experiment is achieved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372344
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