Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1010-1012
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-efficiency InGaAlP surface emission light emitting diodes (LEDs) have been successfully fabricated. Newly designed double-heterostructure LEDs with a GaAlAs current spreading layer were employed to expand the light emission area, which is necessary to take out the light efficiently. The external quantum efficiency was 1.5% at 620 nm orange light for an In0.5 (Ga0.8Al0.2)0.5P active layer LED. This LED is five times more efficient at 620 nm than that of the GaAlAs and GaAsP LEDs. 563 nm green electroluminescence, which is the shortest wavelength ever reported for InGaAlP LEDs, was also achieved with an In0.5(Ga0.5Al0.5)0.5P active layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104407
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