ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
On proposing the existence of a significant barrier between n-type GaAs and n-type ZnSe, in ZnSe-based devices, we examined various offset reduction buffers, in standard light-emitting diode structures, to assess their ability to reduce the excess voltages applied across this interface during operation. The main buffers investigated were CdZnSe and AlGaAs. The AlGaAs buffer was seen to have the largest effect, reducing the operation voltage from 17 V (GaAs buffer only sample) to 6.5 V at a current density of 1 A/cm2. Our results clearly indicate the utility of such buffer regions in reducing the operation voltages of these devices. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116372
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