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  • 11
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    Silicon dendritic web material (1982)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-169053 , DOE/JPL-955624-82/3 , JPL-9950-684 , NAS 1.26:169053
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 12
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    Focused laser Doppler velocimeter (1976)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: A system for remotely measuring velocities present in discrete volumes of air is described. A CO2 laser beam is focused by a telescope at such a volume, a focal volume, and within the focusable range, near field, of the telescope. The back scatter, or reflected light, principally from the focal volume, passes back through the telescope and is frequency compared with the original frequency of the laser, and the difference frequency or frequencies represent particle velocities in that focal volume.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 13
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    Electron mobility measurements in SiC polytypes. (1967)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: Electron mobility measurements in n-type SiC polytypes noting temperature dependence
    Keywords: PHYSICS, SOLID-STATE
    Type: JOURNAL OF APPLIED PHYSICS
    Format: text
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    NASA TECHNICAL REPORTS
  • 14
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    Phase 2 of the array automated assembly task for the low cost solar array project (1979)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The process sequence for the fabrication of dendritic web silicon into solar panels was modified to include aluminum back surface field formation. Plasma etching was found to be a feasible technique for pre-diffusion cleaning of the web. Several contacting systems were studied. The total plated Pd-Ni system was not compatible with the process sequence; however, the evaporated TiPd-electroplated Cu system was shown stable under life testing. Ultrasonic bonding parameters were determined for various interconnect and contact metals but the yield of the process was not sufficiently high to use for module fabrication at this time. Over 400 solar cells were fabricated according to the modified sequence. No sub-process incompatibility was seen. These cells were used to fabricate four demonstration modules. A cost analysis of the modified process sequence resulted in a selling price of $0.75/peak watt.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-162628 , DOE/JPL-954873-79/08
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 15
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    Array Automated Assembly Task for the Low Cost Solar Array Project, Phase 2 (1979)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Using silk screened evaporated and sputtered Al as the metal source, the formation of Al back surface fields was studied. The most satisfactory results were those obtained with the sputtered A1 and in which open circuit voltages (V sub oc) of 0.585 v (12 ohm cm FZ silicon) were achieved. The ultrasonic interconnect process is discussed. The process is shown to be satisfactory, but increased pull-strength may be obtained if some form of sintering is carried out on the metallized contacts. Plasma etching is shown to be feasible as a replacement for wet chemical cleaning prior to diffusion. Initial results on cells prepared by using electroless Pd/Ni plus either electroplated Ag or Cu show slightly poor performance than cells with the baseline evaporated Ti/Pd/Ag system. A mask designed for the 1.6 x 7.0 cm and 2.0 x 7.0 cm cells is described. This mask has a lower area coverage and total lower resistive loss than the previous mask design. It is also shown that the cell width should not exceed 2.0 - 3.0 cm for optimum efficiency.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-158727 , AR-6 , QR-6
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 16
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    Study of fabrication techniques for SiC solar cells Final technical report (1970)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Silicon carbide unijunction diodes feasibility as solar cells and fabrication techniques
    Keywords: AUXILIARY SYSTEMS
    Type: NASA-CR-73444 , WANL-PR-TTT-001
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 17
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    Solar cell contacts (1982)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Two experimental contact systems were examined and compared to a baseline contact system consisting of evaporated layers of titanium, palladium, and silver and an electroplated layer of copper. The first experimental contact system consisted of evaporated layers of titanium, nickel, and copper and an electroplated layer of copper. This system performed as well as the baseline system in all respects, including its response to temperature stress tests, to a humidity test, and to an accelerated aging test. In addition, the cost of this system is estimated to be only 43 percent of the cost of the baseline system at a production level of 25 MW/year. The second experimental contact system consisted of evaporated layers of nickel and copper and an electroplated layer of copper. Cells with this system show serious degradation in a temperature stress test at 350 C for 30 minutes. Auger electron spectroscopy was used to show that the evaporated nickel layer is not an adequate barrier to copper diffusion even at temperatures as low as 250 C. This fact brings into question the long-term reliability of this contact system.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Format: text
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    NASA TECHNICAL REPORTS
  • 18
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    Ti/Pd/Cu Contacts for Semiconductor Devices (1984)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Copper systems equivalent in performance to silver or gold systems. Titanium layer and palladium layer deposited on semiconductor device by electron beam evaporation. Desired pattern etched using photoresist. Thin layer of copper plated on contact pattern from cyanide solution. Copper layer then built up to 4 to 8 microns by electroplatng from acid solution.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: NPO-15043 , NASA Tech Briefs (ISSN 0145-319X); 8; 1; P. 17
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    NASA TECHNICAL REPORTS
  • 19
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    Flat-plate solar array project process development area: Process research of non-CZ silicon material (1986)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Several different techniques to simultaneously diffuse the front and back junctions in dendritic web silicon were investigated. A successful simultaneous diffusion reduces the cost of the solar cell by reducing the number of processing steps, the amount of capital equipment, and the labor cost. The three techniques studied were: (1) simultaneous diffusion at standard temperatures and times using a tube type diffusion furnace or a belt furnace; (2) diffusion using excimer laser drive-in; and (3) simultaneous diffusion at high temperature and short times using a pulse of high intensity light as the heat source. The use of an excimer laser and high temperature short time diffusion experiment were both more successful than the diffusion at standard temperature and times. The three techniques are described in detail and a cost analysis of the more successful techniques is provided.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-180607 , JPL-9950-1230 , DOE/JPL-956616-86/1 , WAESD-TR-86-0015 , NAS 1.26:180607
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  • 20
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    Emitter formation in dendritic web silicon solar cells (1984)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: The use of liquid dopants and liquid masks for p-n junction formation in dendritic web solar cells was investigated and found to be equivalent to the use of gaseous dopants and CVD SiO2 masks previously used. This results in a projected cost reduction of 0.02 1980$/Watt for a 25 MW/year production line, and makes possible junction formation processes having a higher throughput than more conventional processes. The effect of a low-energy (0.4 keV) hydrogen ion implant on dendritic web solar cells was also investigated. Such an implant was observed to improve Voc and Jsc substantially. Measurements of internal quantum efficiency suggest that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. The diffusion length for electrons in the p-type base increased from 53 microns to 150 microns in one case, with dendritic web cell efficiency being boosted to 15.2 percent. The mechanism by which low-energy hydrogen ions can penetrate deeply into the silicon to effect the observed improvement is not known at this time.
    Keywords: SOLID-STATE PHYSICS
    Type: Photovoltaic Specialists Conference; May 01, 1984 - May 04, 1984; Kissimmee, FL
    Format: text
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    NASA TECHNICAL REPORTS
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