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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 470-476 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus for the measurement of compressibility isotherms of gases up to pressures of 10 kbar and at temperatures between 273 and 350 K is described. It is based on a gas expansion method in which the pressure distortion of the experimental volume is evaluated by calibration with the measuring gas at lower pressures. The apparatus can easily be adapted for isochoric measurements over a wide temperature range. Measurements on argon at 298.15 K show that the method is capable of giving a precision of 0.02%–0.06% for the density, 0.1% for the pressure, and 2 mK for the temperature.
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5825-5831 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma enhanced deposition of amorphous aluminum nitride (AlN) using trimethylaluminum, hydrogen, and nitrogen was performed in a capacitively coupled plasma system. Temperature was varied from 350 to 550 °C, and pressure dependence of the film structure was investigated. Films were characterized by Fourier transform infrared, Rutherford backscattering (RBS), ellipsometry, and x-ray diffraction (XRD). The films are amorphous in nature, as indicated by XRD. Variations in the refractive index were observed in ellipsometric measurements, which is explained by the incorporation of carbon in the films, and confirmed by RBS. Capacitance–voltage, conductance–voltage (G–V), and current–voltage measurements were performed to reveal bulk and interface electrical properties. The electrical properties showed marked dependence on processing conditions of the AlN films. Clear peaks as observed in the G–V characteristics indicated that the losses are predominantly due to interface states. The interface state density ranged between 1010 and 1011 eV−1 cm−2. Annealing in hydrogen resulted in lowering of interface state density values. © 2001 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4417-4421 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the capacitance–voltage (C–V), conductance–voltage (G–V), and current–voltage characteristics of fluorinated amorphous carbon (a-C:Fx) films using metal/a-C:Fx/Si and metal/a-C:Fx/metal structures, respectively. Samples annealed in a vacuum were also studied. The C–V curves of the as-deposited sample are stretched about the voltage axis. Interface state density of 4.1×1011 cm−2 eV−1 at the midgap was calculated. Annealing the sample deposited on Si in a vacuum caused more frequency dispersion in the C–V and G–V curves, probably due to the diffusion of carbon into silicon. The bulk density of states for samples deposited on metal, measured by space-charge-limited current technique, decreased from 4×1018 eV−1 cm−3 for the as-deposited sample, to 7×1017 eV−1 cm−3 for the annealed sample. © 2001 American Institute of Physics.
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 579-580 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Pulse duration as long as 14 μs has been obtained from a single longitudinal mode TEA CO2 laser. Such stretching occurred under conditions for which oscillation on a higher order transverse mode followed that on the TEM00 mode with partial temporal overlap between the two. Control of the intracavity aperture size in conjunction with cavity length tuning helped realize such an oscillation condition. © 2000 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 553-558 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects due to the capture of tunneling electrons by interface traps to the measured capacitance, Cm, and equivalent series resistance, Rm, of insulator-semiconductor interfaces in metal-insulator-semiconductor (MIS) capacitors in accumulation. A new circuit model taking into account the capture of tunneling electrons by interface traps is derived. Theoretical and experimental results of Si3N4/Si/GaAs, Si3N4/epi-Si, and SiO2/epi-Si MIS capacitors are compared. The Si, Si3N4, and SiO2 layers investigated were deposited in situ by electron cyclotron resonance generated plasma in an ultrahigh vacuum chemical vapor deposition chamber. Frequency dispersion of both Cm and Rm can be adequately explained by the new circuit model.
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  • 16
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A detailed investigation of viscosity dependence of the isomerization rate is carried out for continuous potentials by using a fully microscopic, self-consistent mode-coupling theory calculation of both the friction on the reactant and the viscosity of the medium. In this calculation we avoid approximating the short time response by the Enskog limit, which overestimates the friction at high frequencies. The isomerization rate is obtained by using the Grote–Hynes formula. The viscosity dependence of the rate has been investigated for a large number of thermodynamic state points. Since the activated barrier crossing dynamics probes the high-frequency frictional response of the liquid, the barrier crossing rate is found to be sensitive to the nature of the reactant–solvent interaction potential. When the solute–solvent interaction is modeled by a 6–12 Lennard-Jones potential, we find that over a large variation of viscosity (η), the rate (k) can indeed be fitted very well to a fractional viscosity dependence: (k∼η−α), with the exponent α in the range 1≥α〉0. The calculated values of the exponent appear to be in very good agreement with many experimental results. In particular, the theory, for the first time, explains the experimentally observed high value of α, even at the barrier frequency, ωb(similar, equals)9×1012 s−1 for the isomerization reaction of 2-(2′-propenyl)anthracene in liquid n-alkanes. The present study can also explain the reason for the very low value of ωb observed in another study for the isomerization reaction of trans-stilbene in liquid n-alkanes. For ωb≥2.0×1013 s−1, we obtain α(similar, equals)0, which implies that the barrier crossing rate becomes identical to the transition-state theory predictions. A careful analysis of isomerization reaction dynamics involving large amplitude motion suggests that the barrier crossing dynamics itself may become irrelevant in highly viscous liquids and the rate might again be coupled directly to the viscosity. This crossover is predicted to be strongly temperature dependent and could be studied by changing the solvent viscosity by the application of pressure. © 1999 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 4963-4971 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Recently instantaneous normal mode analysis has revealed an interesting similarity of the solvent dynamical influence on two rather different phenomena, namely vibrational energy relaxation (VER) and nonpolar solvation dynamics (NPSD). In this work we show that this similarity can be rationalized from a mode coupling theoretic analysis of the dynamic response of a dense liquid. The present analysis demonstrates that VER and the initial NPSD are coupled primarily to the binary part of the frequency dependent frictional response of the liquid. It is found that for strong solute–solvent interaction, the initial decay of nonpolar solvation dynamics can proceed with time constant less than 100 fs. In addition, a very good agreement between the calculated and the simulated VER rates have been obtained for a large range of frequency. © 1998 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 1833-1834 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Recently, Chong and Hirata have presented a molecular approach for friction [J. Chem. Phys. 108, 7339 (1998)] on a solvated ion in a dipolar liquid. While their work is interesting, we have found several unjustified statements about our work in the above article. In this Comment we address these statements to put our work in proper perspective. © 1999 American Institute of Physics.
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  • 19
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 5587-5598 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A self-consistent microscopic theory is used to calculate the mobility of rigid univalent ions in methanol, ethanol, and propanol at room temperature. The theoretical predictions are in good agreement with the long-known experimental results. In particular, the theory reproduces the nonmonotonic size dependence of the limiting ionic conductance accurately. The relation between the polar solvation dynamics of an ion and its mobility is clarified. The theory also explains how a dynamical version of the classical solvent–berg model can be recovered for small ions in the limit of slow liquids. © 1997 American Institute of Physics.
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  • 20
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 5351-5351 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
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