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  • American Geophysical Union  (74)
  • American Institute of Physics (AIP)  (24)
  • Berlin: Deutsches Institut für Wirtschaftsforschung (DIW)
  • American Geophysical Union (AGU)
  • American Meteorological Society (AMS)
  • 11
    Electronic Resource
    Electronic Resource
    Nanocrystallization of amorphous-Ta40Si14N46 diffusion barrier thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3618-3620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nanocrystallization process in thin amorphous-Ta40Si14N46 films, annealed in the range between 800 and 1000 °C for 1 h, is investigated by high-resolution transmission electron microscopy and high-angle annular dark-field and energy-dispersive x-ray analyses. At 800 °C clusters of about 2 nm in size indicate that compositional inhomogeneities have developed while the film has still remained structurally amorphous. The sample annealed at 900 °C contains a high density of nanograins of TaN measuring about 2 nm as well as amorphous structures measuring 75–100 nm having a high tantalum content. After annealing at 1000 °C, an almost entirely crystalline structure is observed with 4-nm-sized particles of cubic TaN and 15-nm-sized grains of Ta5Si3. Possible mechanisms driving these structural changes are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377626
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  • 12
    Electronic Resource
    Electronic Resource
    Electron-induced crosslinking of aromatic self-assembled monolayers: Negative resists for nanolithography (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2401-2403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored the interaction of self-assembled monolayers of 1,1′-biphenyl-4-thiol (BPT) with low energy electrons. X-ray photoelectron, infrared, and near edge x-ray absorption fine structure spectroscopy showed that BPT forms well-ordered monolayers with the phenyl rings tilted ∼15° from the surface normal. The films were exposed to 50 eV electrons and changes were monitored in situ. Even after high (∼10 mC/cm2) exposures, the molecules maintain their preferred orientation and remain bonded on the gold substrate. An increased etching resistance and changes in the infrared spectra imply a crosslinking between neighboring phenyl groups, which suggests that BPT can be utilized as an ultrathin negative resist. This is demonstrated by the generation of patterns in the underlying gold. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125027
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  • 13
    Electronic Resource
    Electronic Resource
    Internal interfaces and intrinsic stress in thin amorphous Cu-Ti and Co-Tb films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3065-3070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined investigation of intrinsic stress formation by in situ substrate curvature measurements and of surface morphology evolution by scanning tunneling microscopy during the growth of amorphous Cu-Ti and Co-Tb films is reported. Intrinsic tensile stress and surface morphology are clearly correlated: all films that show intrinsic tensile stress formation in the late growth stages exhibit a cluster-like surface morphology and vice versa. Both the magnitude of the intrinsic tensile stress and the cluster size at the surface depend systematically on the reduced substrate temperature during film preparation. This dependence fits Hoffman's model for tensile stress formation in thin films. Thus, the observed surface clusters are probably the top domes of growth columns, and the atomic mismatch at the column boundaries gives rise to tensile stress formation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367061
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  • 14
    Electronic Resource
    Electronic Resource
    Small atom diffusion and breakdown of the Stokes–Einstein relation in the supercooled liquid state of the Zr46.7Ti8.3Cu7.5Ni10Be27.5 alloy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2492-2494 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Be diffusivity data in the bulk metallic glass forming alloy Zr46.7Ti8.3Cu7.5Ni10Be27.5 are reported for temperatures between 530 and 710 K, extending 85 K into the supercooled liquid state of the alloy. At the glass transition temperature Tg, a change in temperature dependence of the data is observed, and above Tg the diffusivity increases more quickly with temperature than below. The data in the supercooled liquid can be described by a modified Arrhenius expression based on a diffusion mechanism suggested earlier. The comparison with viscosity data in the supercooled liquid state of Zr46.7Ti8.3Cu7.5Ni10Be27.5 reveals a breakdown of the Stokes–Einstein relation, indicating a cooperative diffusion mechanism in the supercooled liquid state of Zr46.7Ti8.3Cu7.5Ni10Be27.5. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117716
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  • 15
    Electronic Resource
    Electronic Resource
    Surface roughening and columnar growth of thin amorphous CuTi films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1691-1693 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different growth stages and the microstructure of amorphous CuTi films are investigated by scanning tunneling microscopy and small angle neutron scattering. During film growth at room temperature, the initially smooth films show increasing surface roughening and finally a change to a columnar growth mode with column diameters of about 20 nm. The interfacial energies associated with the column boundaries are higher than those of grain boundaries in crystalline systems. The column boundaries might be the origin of high intrinsic tensile stresses measured before in the amorphous CuTi films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118671
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  • 16
    Electronic Resource
    Electronic Resource
    Defect characterization in amorphous silicon based solar cells by subband-gap spectroscopy with constant photocurrent measurements (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2660-2662 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used the constant photocurrent method to characterize a-Si:H based pin cells in order to discuss the correlation between the device characterizing quantity, the fill factor (FF), and the number of defects which is related to the quantity αD (subbandgap optical absorption constant). We show that the changes in the i layer due to the creation of metastable defects after light soaking or current injection−characterized by αD−directly correlate with the changes in solar cell performance (FF). We are able to show that other reasons than an increased defect density can lead to a reduction of the fill factor. Further we try to quantify αD in terms of a defect density of states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104799
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  • 17
    Electronic Resource
    Electronic Resource
    Island growth and surface topography of epitaxial Y-Ba-Cu-O thin films on MgO (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2180-2182 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial Y1B2Cu3Ox thin films (Tc,o ≥ (R18) 90 K, jc (77 K)≥ (R18)3 ×106A/cm2) were in situ grown on MgO by KrF excimer laser ablation. The combination of in situ resistance measurements, x-ray diffraction experiments, Tc measurements, scanning electron microscopy and scanning tunneling microscopy gives clear indications for an island growth on these substrates and shows growth steps and spirals at the film surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106066
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  • 18
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    High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO2 with transition metal additions (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-26
    Description: To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO 2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813  μ W m −1  K −2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO 2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 19
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    Atomistic growth phenomena of reactively sputtered RuO2 and MnO2 thin films (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-07-03
    Description: We have synthesized RuO 2 and MnO 2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO 2 nanorods and faceted, nanocrystalline MnO 2 , are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O 2 molecules are preferentially adsorbed at their respective RuO 2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO 2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO 2 . Due to this atomic scale decomposition, MnO 2 may have to be renucleated during growth, which is consistent with experiments.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 20
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    Thin film based plasmon nanorulers (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-07
    Description: In this work, isolated metal nanoparticles are supported on a dielectric thin film that is placed on a conducting plane. The optical scattering characteristics of these metal nanoparticles are directly correlated with the localized surface plasmon states of the nanoparticle—image particle dimer, formed in the conducting plane below. Quantification of plasmon resonance shifts can be directly correlated with the application of the plasmon nanoruler equation. This simple geometry shows that direct optical techniques can be used to resolve thickness variations in dielectrics of only a few nanometers.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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