ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We used the constant photocurrent method to characterize a-Si:H based pin cells in order to discuss the correlation between the device characterizing quantity, the fill factor (FF), and the number of defects which is related to the quantity αD (subbandgap optical absorption constant). We show that the changes in the i layer due to the creation of metastable defects after light soaking or current injection−characterized by αD−directly correlate with the changes in solar cell performance (FF). We are able to show that other reasons than an increased defect density can lead to a reduction of the fill factor. Further we try to quantify αD in terms of a defect density of states.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104799
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