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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6965-6971 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a time-resolved study of carrier recombination dynamics of broadband light emitting diode structures comprised of a series of InGaAs/InGaAlAs digital pseudoalloy short period superlattices fabricated by molecular beam epitaxy. The structure consists of three quantum wells equally spaced in emission energy over the 1.3–1.8 μm range. We performed a time-resolved study of carrier recombination process for each quantum well using optical pumping. Experimental results show that carrier tunneling across adjacent wells plays a major role in the overall carrier population distribution across the three wells. By tailoring the thicknesses of barriers and wells of the structure, uniform spectral emission covering 1.3–1.8 μm range can be achieved. © 1996 American Institute of Physics.
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6129-6141 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sound speeds, at pressure, and the overdriven Hugoniot were measured for the plastic-bonded explosive PBX-9501. The two curves intersect at the Chapman–Jouguet (CJ) state because of the sonic condition D=c+u. This permitted a novel determination of the "thermodynamic'' CJ pressure. A value of 34.8±0.3 GPa was obtained. The data permit a direct experimental determination of the isentropic gamma, γS=−(∂lnP/∂lnV)S, and the Grüneisen parameter, γ=V(∂P/∂E)V, in the overdriven pressure range. © 1996 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2320-2322 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe step-graded digital-alloy buffers using alternate layers of Al0.5Ga0.5As and Al0.5Ga0.5As0.65Sb0.35 grown on GaAs substrates by molecular beam epitaxy. The buffers consist of three sets of superlattices with AlGaAs/AlGaAsSb layer thicknesses of 7.7/2.3 nm, 5.4/4.6 nm, and 3.1/6.9 nm, respectively, terminating in a lattice constant equal to that of bulk In0.32Ga0.68As. Transmission electron micrographs show that most of the misfit-generated dislocations lie near the steps in pseudoalloy composition, and atomic force micrographs indicate a rms surface roughness of 3.6 nm. A 20.5-period lattice-matched InGaAs/InAlAs reflector stack grown on such a buffer has a peak reflectivity of 98% near 1.3 μm. These buffers provide potentially useful substrates for optoelectronic device applications near 1.3 μm using strained InGaAs active regions. © 1995 American Institute of Physics.
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  • 14
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface normal optoelectronic devices operating at long wavelengths ((approximately-greater-than)1.3 μm), require distributed Bragg reflectors (DBRs) with a practical number (≤50) of mirror layers. This requirement implies a large refractive index difference between the mirror layers, which is difficult to achieve in the traditionally used phosphide compounds. We demonstrate a highly reflective AlAsSb/GaAsSb DBR grown nominally lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.74 μm with maximum reflectivity exceeding 98%, which is well fitted by our theoretical predictions. Atomic force microscopy and transmission electron microscopy indicate reasonable crystal quality with some defects due to an unintentional lattice mismatch to the substrate. © 1995 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2352-2354 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electric-field dependent band-gap energy and near-gap absorption coefficient of a specially designed strained-layer superlattice (SLS) employing tensile strained quantum wells and having a band-gap wavelength near 1.3 μm. The SLS was grown by molecular-beam epitaxy on an InP substrate and consists of In0.43Ga0.57As wells (4.5-nm-thick) and In0.6Al0.4As barriers (6.75-nm-thick). For applied fields from zero up to at least 2.5×105 V/cm, the band-edge absorption exhibits a single peak, which we attribute to a field-independent superpositioning of the heavy- and light-hole ground states. This result agrees with tunneling resonance calculations, which predict these hole states to have the same zero-field energy and to undergo nearly identical Stark shifts. Absorption–coefficient changes of up to 104 cm−1 were readily achieved with applied biases under 15 V, suggesting potential applications to optical modulator devices. © 1997 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2825-2827 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe growth by molecular-beam epitaxy of InGaAlAs multilayers using a versatile and agile technique that allows a wide range of band gaps and strains for the individual layers. In our approach, the layers are most generally pseudoalloys produced by growing short-period superlattices containing ternary or quaternary layers, in various combinations, without changing the temperatures of the single In, Ga, Al, and As effusion cells. To illustrate the method, we have designed, grown, and characterized a separate-confinement, strained layer light-emitting diode operating at 1.5 μm. © 1995 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1957-1959 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of In0.15Ga0.85As/GaAs multilayers are reported on lattice matched In0.04Ga0.96As buffer layers using two different starting substrates: (1) a bulk, lattice-matched, Czochralski-grown In0.04Ga0.96As wafer, and (2) a bulk (unmatched) GaAs wafer. The structures, grown by molecular-beam epitaxy, consist of a 200-nm-thick undoped buffer plus a 28-1/2 period modulation-doped multilayer having 10-nm-thick In0.15Ga0.85As quantum wells and 25-nm-thick GaAs barriers doped over their 10-nm central region. The 4 K Hall mobility of the multilayer grown on the InGaAs substrate is 57% larger than the structure grown on GaAs, despite a low dislocation density observed in transmission electron micrographs of the latter. These results suggest that bulk ternary substrates can provide enhanced performance for future electronic and optoelectronic devices. © 1995 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 1406-1412 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Formation of anions induced by collisions of low energy electrons (0–14 eV) with the perfluorinated compounds CF4, C2F6, C2F4, and C6F6 is studied (a) in the gas phase under collision-free conditions in a beam experiment, and (b) in the condensed phase where the electron beam interacts with the molecules deposited under ultrahigh vacuum conditions in definite amounts on a cold (20 K) metallic substrate. In the gas phase different fragment anions [F−, (M–F)−, CF−3] are formed via dissociative attachment (DA). From condensed molecules, desorption of anions is virtually restricted to F−. This can be explained by the polarization interaction of the excess charge and the desorption kinematics preferring desorption of light fragment ions. Below 10 eV F− desorption is induced by DA at or near the surface while above 10 eV a nonresonant signal from dipolar dissociation is observed. The present results indicate that the desorption cross section is essentially controlled by the amount of translational energy released to F− in the dissociation of the precursor anion (M−). In CF4 the precursor ion CF−4 is assigned as the T2 shape resonance with its pronounced σCF* antibonding nature. This results in F− with high kinetic energy release, and, consequently, a high desorption cross section. In C2F6 the decomposition of the transitory anion is less direct resulting in a comparatively low desorption yield. In C2F4 and C6F6, on the other hand, electron capture proceeds via the π* system associated with indirect (statistical) decomposition processes. This results in a very low desorption cross section for both compounds. © 1995 American Institute of Physics.
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