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  • 2000-2004  (502)
  • 1965-1969  (32)
  • 1960-1964  (24)
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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1173-1175 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductance versus voltage and capacitance versus voltage (C–V) characteristics are investigated for p+–p−–p+ capacitors over a temperature range of 40–300 K, where the p+ layer is heavily doped homoepitaxial diamond and has impurity-band conduction and the p− layer is slightly doped with valence-band conduction. Above 200 K, the capacitors behave like a semiconductor–insulator–semiconductor diode with interface barrier height of about 0.07 eV. The C–V curve agrees closely with the standard theory of semiconductor–insulator–semiconductor structure and shows formation of the deletion layer at the p+ layer on the interface. The Cole–Cole plot of conductance versus susceptance reveals that there is a virtual trap level in the p− layer which is located about 0.06 eV above the valence band. © 2000 American Institute of Physics.
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 528-530 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An icosahedral quasicrystalline phase was found in a Hf65Al7.5Ni10Cu12.5Pd5 metallic glass annealed in the supercooled liquid region. Upon annealing at high temperature, the quasicrystalline phase was found to decompose to regular crystalline phases, indicating that it is a metastable phase. The present alloy was compared with the previously reported Zr- and Ti-based alloys with the formation of icosahedral quasicrystalline phases. Hf, Zr, and Ti belong to the same 4A column in the element periodical table. Based on the above comparison, conditions in terms of atomic radius and alloy composition which favor the formation of icosahedral quasicrystalline phase in 4A element based alloys, were suggested. © 2000 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3037-3039 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It was found that an icosahedral quasicrystalline phase was formed as a primary precipitation phase from the supercooled liquid region of the melt-spun Zr70Fe20Ni10 ternary metallic glass. The precipitation of an icosahedral phase takes place at 673 K at the heating rate of 0.67 K s−1. The precipitated icosahedral particle has a nearly spherical morphology and a fine grain size in the diameter range of 5–10 nm. The second crystallization reaction proceeds through a broad exothermic peak and results in the formation of Zr2Ni and Zr2Fe phases. The formation of nanoscale icosahedral phase by the addition of Fe as well as noble metals such as Pd, Au, and Pt indicates the possibility of existence of an icosahedral short-range order in the various Zr-based metallic glasses. © 2000 American Institute of Physics.
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 412-414 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The medium-range order in the Zr70Pd30 binary glassy alloy, where the nanoicosahedral phase precipitates as a primary phase, was examined using the high-resolution electron microscopic technique. The ordered region in the diameter of ∼2 nm was observed in the as-quenched glassy state. This region grows slightly to the diameter of 3–4 nm by annealing for 120 s at 690 K, where the amorphous structure remains. The nanobeam electron diffraction pattern taken from the medium-range order shows the fivefold symmetry, indicating that this region has the icosahedral structure. This result is recognized as a direct evidence for the existence of the icosahedral cluster in the alloy. For further annealing for 600 s at 690 K, the icosahedral quasicrystalline phase in the diameter of 5–8 nm precipitates by assimilating the icosahedral cluster. The formation of the nanoicosahedral phase originates from the existence of the quenched-in icosahedral clusters in the glassy state followed by their easy growth to the icosahedral particle without significant rearrangement of the constitutional elements. © 2001 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2779-2781 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnesium diboride (MgB2) single crystals, with a maximum size of 0.5×0.5×0.02 mm3, were grown by the vapor transport method in a sealed molybdenum crucible. A superconducting transition with the onset temperature of 38.6 K was confirmed by both transport and magnetization measurements. The upper critical field anisotropy ratio, Hc2(parallel)ab(0)/Hc2(parallel)c(0), was estimated to be 2.6 from the magnetic field-temperature phase diagram for MgB2 single crystals. © 2001 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 73-75 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that an icosahedral quasicrystalline phase is directly formed in a Zr80Pt20 binary alloy during rapid solidification from the melt. The size of the icosahedral particles lies in the diameter range below 10 nm, and the particles are distributed homogeneously. The formation of the nanoscale icosahedral phase indicates that the icosahedral short-range order exists in the melted state of Zr–Pt binary alloy. The strong chemical affinity between Zr and Pt contributes to the restraint of the long-range rearrangement of constitutional elements to form a stable crystalline phase, which is the important factor of the stabilization of an icosahedral phase. © 2000 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3558-3560 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An icosahedral quasicrystalline phase was confirmed as a primary precipitation phase in melt-spun Zr70Ni10M20 (M=Pd, Au and Pt) ternary metallic glasses with two-stage crystallization process. The onset temperature of the transformation from amorphous to icosahedral phase are 687 K for Pd, 754 K for Au and 783 K for Pt at a heating rate of 0.67 K s−1. The size of the icosahedral particles is in the range of 5–20 nm. The second crystallization reaction results in the formation of Zr2Ni+Zr2Pd and Zr2Ni+ZrPt phases in the Zr–Ni–Pd and Zr–Ni–Pt alloys, respectively, and Zr3Au phase in the Zr–Ni–Au alloy through a single exothermic reaction. The formation of nanoscale icosahedral phase indicates the possibility that icosahedral short-range order exists in the glassy state. © 2000 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 22-24 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Blue InGaN single-quantum-well-structure laser diodes (LDs) with an emission wavelength of 450 nm were grown on an epitaxially laterally overgrown GaN substrate by a metalorganic chemical vapor deposition method. The threshold current density and voltage were 4.6 kA cm−2 and 6.1 V, respectively. The estimated lifetime was approximately 200 h under room-temperature continuous-wave operation at an output power of 5 mW. When the number of InGaN well layers of the LDs with emission wavelengths longer than 435 nm varied from one to three, the lowest threshold current density was obtained when the number of well layers was one. © 2000 American Institute of Physics.
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  • 19
    ISSN: 1574-6968
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Quinoprotein quinate dehydrogenase (QDH) is a membrane-bound enzyme containing pyrroloquinoline quinone (PQQ) as the prosthetic group. QDH in Gluconobacter oxydans IFO3244 was found to be inducible by quinate and it is not constitutively expressed in the absence of quinate. The purification of holo-form of QDH to nearly homogeneity was achieved. The purified QDH appears to have two subunits of approximately 65 and 21 kDa, which could be the result of proteolysis of single polypeptide. Kinetic analysis indicated that the purified enzyme is much more specific to quinate than QDH from Acinetobacter calcoaceticus. The efficiency of the artificial electron acceptor was also determined.
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  • 20
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 72 (1968), S. 458-464 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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