ISSN:
1573-8663
Schlagwort(e):
FET
;
field effect
;
ferroelectric
;
Moore's law
;
nanoscale
;
Mott
;
perovskite
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Maschinenbau
Notizen:
Abstract A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1009914609532
Permalink