Abstract
A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.
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Newns, D., Doderer, T., Tsuei, C. et al. The Mott Transition Field Effect Transistor: A Nanodevice?. Journal of Electroceramics 4, 339–344 (2000). https://doi.org/10.1023/A:1009914609532
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DOI: https://doi.org/10.1023/A:1009914609532