ISSN:
1432-0630
Schlagwort(e):
78.60.Dg
;
71.55.Fr
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract The annealing behavior of the 0.8 eV luminescence band in undoped semiinsulating GaAs has been investigated. It is found to be fully analogous to that of the AsGa antisite electron-paramagnetic-resonance signal. The radiative recombination of electrons with the doubly ionized AsGa double donor is discussed as the origin for the 0.8 eV band.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00617713
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