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Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs

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Abstract

The annealing behavior of the 0.8 eV luminescence band in undoped semiinsulating GaAs has been investigated. It is found to be fully analogous to that of the AsGa antisite electron-paramagnetic-resonance signal. The radiative recombination of electrons with the doubly ionized AsGa double donor is discussed as the origin for the 0.8 eV band.

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References

  1. G.M. Martin, J.P. Farges, G. Jacob, J.P. Hallais, G. Poiblaud: J. Appl. Phys.51, 2840 (1980)

    Google Scholar 

  2. D.E. Holmes, R.T. Chen, K.R. Elliott, C.G. Kirkpatrick: Appl. Phys. Lett.40, 46 (1982)

    Google Scholar 

  3. J. Lagowski, H.C. Gatos, J.M. Parsey, K. Wada, M. Kaminska, W. Walukiewicz: Appl. Phys. Lett.40, 342 (1982)

    Google Scholar 

  4. K.R. Elliott, D.E. Holmes, R.T. Chen, C.G. Kirkpatrick: Appl. Phys. Lett.40, 898 (1982)

    Google Scholar 

  5. E.R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider: J. Appl. Phys.53, 6140 (1982)

    Google Scholar 

  6. P.W. Yu, D.E. Holmes, R.T. Chen: Gallium Arsenide and Related Compounds 1981, Inst. Phys. Conf. Ser.63, 209 (1982)

    Google Scholar 

  7. M. Tajima: Jpn. J. Appl. Phys.21, L227 (1982)

    Google Scholar 

  8. R. Wörner, U. Kaufmann, J. Schneider: Appl. Phys. Lett.40, 141 (1982)

    Google Scholar 

  9. A. Mircea-Roussel, S. Makram-Ebeid: Appl. Phys. Lett.38, 1007 (1981)

    Google Scholar 

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Author notes

  1. T. Kimura

    Present address: University of Electro-Communications 1-5-1, 182, Chofugaoka, Chofu-shi, Tokyo, Japan

Authors and Affiliations

  1. Fraunhofer-Institut für Angewandte Festkörperphysik, Eckerstrasse 4, D-7800, Freiburg, Fed. Rep. Germany

    J. Windscheif, H. Ennen, U. Kaufmann, J. Schneider & T. Kimura

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  1. J. Windscheif
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  2. H. Ennen
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  3. U. Kaufmann
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  4. J. Schneider
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  5. T. Kimura
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Windscheif, J., Ennen, H., Kaufmann, U. et al. Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs. Appl. Phys. A 30, 47–49 (1983). https://doi.org/10.1007/BF00617713

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  • DOI: https://doi.org/10.1007/BF00617713

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