Publikationsdatum:
1998-01-01
Beschreibung:
Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge-content x, doping density N, carrier temperature TC and lattice temperature TL. 2) Modeling of the relaxation times τ(x, TC, TL) by splines.
Print ISSN:
1065-514X
Digitale ISSN:
1563-5171
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
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