Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 483-485 (May 2005), p. 937-940
ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
Planar microwave Schottky diodes on 4H-SiC have been designed, processed andmeasured. Different Schottky metals were tested to study the influence on the microwave performance. A maximum extrinsic cut-off frequency of 30.8GHz was achieved for a Tungsten/SiC-Schottky diode. The diode geometry dependence on both the cut-off frequency and the breakdown voltage was investigated. The breakdown voltage was found to be linearly dependent on the anode-cathode distance
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.937.pdf
Permalink
|
Standort |
Signatur |
Erwartet |
Verfügbarkeit |