ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In order to increase the output power and drain efficiency, MESFETs in SiC have beenmade with a double gate recess technique. Typical device characteristics of the MESFETs are draincurrents of 380mA/mm, breakdown voltages of 80V and ft/fmax of 10/25 GHz respectively. Thesetransistors exhibit power densities of 3W/mm@3GHz in class AB operation and drain efficienciesof 60%. Packaged devices with 3 mm gate periphery of this type, with via-hole grounding, gavepower densities of 1.2 W/mm@6GHz at 50 V drain bias
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1227.pdf
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