ISSN:
1572-8986
Keywords:
Attachment rates
;
cross section
;
dissociative attachment
;
electron scattering
;
SF6, SF4, SO2, SOF2, SOF4, SO2F2
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract Discrete electron-molecule processes relevant to SF6 etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF6, SO2, SOF2, SO2F2, SOF4, and SF4, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF6 by-products in SF6.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01447167
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