ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Recent trends in parts SEU susceptibility from heavy ions (1987)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The authors collected a set of heavy-ion single event upset (SEU) test data since their last publication in December, 1985. Trends in SEU susceptibility for state-of-the-art parts are presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-34; 1332-133
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    Latest trends in parts SEP susceptibility from heavy ions (1989)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: JPL and Aerospace have collected a third set of heavy-ion single-event phenomena (SEP) test data since their last joint IEEE publications in December 1985 and December 1987. Trends in SEP susceptibility (e.g., soft errors and latchup) for state-of-the-art parts are presented. Results of the study indicate that hard technologies and unacceptably soft technologies can be flagged. In some instances, specific tested parts can be taken as candidates for key microprocessors or memories. As always with radiation test data, specific test data for qualified flight parts is recommended for critical applications.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); 36; 2388-239
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Working group written presentation: Trapped radiation effects (1989)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The results of the Trapped Radiation Effects Panel for the Space Environmental Effects on Materials Workshop are presented. The needs of the space community for new data regarding effects of the space environment on materials, including electronics are listed. A series of questions asked of each of the panels at the workshop are addressed. Areas of research which should be pursued to satisfy the requirements for better knowledge of the environment and better understanding of the effects of the energetic charged particle environment on new materials and advanced electronics technology are suggested.
    Keywords: CHEMISTRY AND MATERIALS (GENERAL)
    Type: NASA(SDIO Space Environmental Effects on Materials Workshop, Part 2; p 597-605
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 4
    facet.materialart.
    Unknown
    Effects of space radiation on electronic microcircuits (1989)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined. Single event upset is defined as a lasting, reversible change in the state of a multistable (usually bistable) electronic circuit such as a flip-flop or latch. In a computer memory, SEUs manifest themselves as unexplained bit flips. Since latchup is in general caused by a single event of short duration, the single event part of the SEL term is superfluous. Nevertheless, it is used customarily to differentiate latchup due to a single heavy charged particle striking a sensitive cell from more ordinary kinds of latchup. Single event burnout (SEB) refers usually to total instantaneous failure of a power FET when struck by a single particle, with the device shorting out the power supply. An unforeseen failure of these kinds can be catastrophic to a space mission, and the possibilities are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA, Langley Research Center, NASA(SDIO Space Environmental Effects on Materials Workshop, Part 2; p 383-392
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 5
    facet.materialart.
    Unknown
    Trends in parts susceptibility to single event upset from heavy ions (1985)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: New test data have been combined with published data to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. These data have been arranged to exibit the SEU susceptibility of devices by function, technology, and manufacturer. Clear trends emerge which should be useful in predicting future device performance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-32; 4189-419
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 6
    facet.materialart.
    Unknown
    Space Shuttle flight test results of the Cosmic Ray Upset Experiment (1984)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: CRUX is the first engineering flight experiment designed to test for the incidence of upsets in microcircuits by energetic particles. Harris HM 6504 4K x 1 static CMOS RAM's were used as the test device types in a 1.3 megabit memory which flew on two Shuttle flights. Ground (cyclotron) test information led to a prediction of about one error every 1000 days. No errors were experienced in 10 days of flight. While data were not in conflict with the error prediction and do support it, quantitative validation of the modeling for upsets is not statistically possible. Follow-on hardware (CRUX III) incorporates five different state-of-the-art microcircuits, and is scheduled for flight in October 1984.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-31; 1178-118
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 7
    facet.materialart.
    Unknown
    Trends in parts susceptibility to single event upset from heavy ions (1986)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: New test data from the Jet Propulsion Laboratory (JPL), The Aerospace Corporation, Rockwell International (ANAHEIM) and IRT have been combined with published data of JPL and Aerospace to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. This data has been arranged to exhibit the SEU susceptibility of devices by function, technology and manufacturer. Clear trends emerge which should be useful in predicting future device performance.
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: ATR-86(8139)-1
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 8
    facet.materialart.
    Unknown
    Single event upset vulnerability of selected 4K and 16K CMOS static RAM's (1982)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Upset thresholds for bulk CMOS and CMOS/SOS RAMS were deduced after bombardment of the devices with 140 MeV Kr, 160 MeV Ar, and 33 MeV O beams in a cyclotron. The trials were performed to test prototype devices intended for space applications, to relate feature size to the critical upset charge, and to check the validity of computer simulation models. The tests were run on 4 and 1 K memory cells with 6 transistors, in either hardened or unhardened configurations. The upset cross sections were calculated to determine the critical charge for upset from the soft errors observed in the irradiated cells. Computer simulations of the critical charge were found to deviate from the experimentally observed variation of the critical charge as the square of the feature size. Modeled values of series resistors decoupling the inverter pairs of memory cells showed that above some minimum resistance value a small increase in resistance produces a large increase in the critical charge, which the experimental data showed to be of questionable validity unless the value is made dependent on the maximum allowed read-write time.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 9
    facet.materialart.
    Unknown
    Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories (1979)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: Soft errors have been induced in solid-state static RAM's by iron nuclei from the Lawrence Berkeley Laboratory (LBL) Bevalac, in experiments designed to prove the ability of iron-group cosmic rays to generate such errors. Subsequently, various delidded device types were tested in beams of argon and krypton ions from the LBL 88-inch Cyclotron, at energies near 2 MeV/nucleon. The latter tests showed that some devices are essentially immune to bit error while others are quite susceptible. Good agreement was obtained with model predictions in cases where the latter exist. Latchup, whose cause is attributed to individual heavy ions, was also observed in some device types.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 10
    facet.materialart.
    Unknown
    Injection of electrons and protons with energies of tens of MeV into L less than 3 on 24 March 1991 (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: On 24 March 1991 instrumentation aboard CRRES observed the almost instantaneous injection of electrons and protons with energies above 15 MeV into the L-region in the range 2-3. The energy spectrum of the injected electrons, a power law (E exp -6) peaked at 15 MeV and continued to at least 50 MeV.
    Keywords: GEOPHYSICS
    Type: Geophysical Research Letters (ISSN 0094-8276); 19; 8 Ap
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...