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  • 1
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    SRB seawater corrosion project (1991)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The corrosion behavior of 2219 aluminum when exposed to seawater was characterized. Controlled corrosion experiments at three different temperatures (30, 60 and 100 C) and two different environments (seawater and 3.5 percent salt solution) were designed to elucidate the initial stages in the corrosion process. It was found that 2219 aluminum is an active catalytic surface for growth of Al2O3, NaCl, and MgO. Formation of Al2O3 is favored at lower temperatures, while MgO is favored at higher temperatures. Visible corrosion products are formed within 30 minutes after seawater exposure. Corrosion characteristics in 3.5 percent salt solution are different than corrosion in seawater. Techniques utilized were: (1) scanning electron microscopy, (2) energy dispersive x-ray spectroscopy, and (3) Auger electron spectroscopy.
    Keywords: SPACECRAFT PROPULSION AND POWER
    Type: NASA-CR-184188 , NAS 1.26:184188
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    High-temperature ohmic contact to n-type 6H-SiC using nickel (1995)
    In:  Other Sources
    Details
    Publication Date: 2019-08-28
    Description: Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 C and yielded values less than 5 x 10(exp -6) ohm sq cm at both temperatures. The trend shows a decreasing contact resistance at higher temperature. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 77; 3; p. 1317-1319
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    The interaction of atomic oxygen with thin copper films (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-08-28
    Description: A source of thermal, ground-state atomic oxygen has been used to expose thin copper films at a flux of 1.4 x 10 exp 17 atoms/sq cm s for times up to 50 min for each of five temperatures between 140 and 200 C. Rutherford backscattering spectroscopy was used to characterize the oxide formed during exposure. The observations are consistent with the oxide phase Cu2O. The time dependence and the temperature dependence of the oxide layer thickness can be described using oxide film growth theory based on rate limitation by diffusion. Within the time and temperature ranges of this study, the growth of the oxide layers is well described by the equation L(T,t) = 3.6 x 10 to 8th exp(- 1.1/2k sub B T)t exp 1/2, where L,T, and t are measured in angstroms, degrees Kelvin, and minutes, respectively. The deduced activation energy is 1.10 +/- 0.15 eV, with the attendant oxidation rate being greater than that for the corresponding reaction in molecular oxygen.
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: Journal of Chemical Physics (ISSN 0021-9606); 96; 2318-232
    Format: text
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    NASA TECHNICAL REPORTS
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