Publication Date:
2018-06-08
Description:
We demonstrate that SiO(sub 2) cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.
Keywords:
Physics (General)
Type:
Applied Physics Letters
Format:
text
Permalink