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  • Articles  (140)
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  • Articles  (140)
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  • 1
    Electronic Resource
    Electronic Resource
    The effects of arsenic source contamination on doped GaAs grown by MBE (1984)
    Springer
    Applied physics 35 (1984), S. 75-77 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.Fw ; 81.15.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The presence of parts per million (ppm) levels of impurities in the low-temperature arsenic charge used in molecular beam epitaxy (MBE) is shown to have a dramatic effect on the quality of GaAs grown. Source charge impurities play a vital role in determining the apparent variation in reported doping behaviour in MBE:GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620633
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation and thermal annealing effects on native and ion-irradiated PbTe films grown by molecular beam deposition (1985)
    Springer
    Applied physics 37 (1985), S. 145-151 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Jh ; 73.60.Fw ; 82.65−i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Investigations are reported into the effect of low-pressure oxygen exposure and thermal annealing on the carrier transport properties of native and 350 eV Ar+ bombarded PbTe films. The electrical measurements were madein situ on MBD-grown PbTe films without breaking vacuum. On native surfaces, oxidation was initially sustained by diffusion of a donor species from the film bulk to the surface, where reaction with oxygen occured. This diffusion process was apparently inhibited on ion irradiated films and direct doping of the film surface effected a gradual reduction in the ion-induced electron accumulation resident at the film surface. The native properties and behavioural characteristics of the films could be recovered by thermal annealing of the ion-irradiated and/or oxidized films at 300–350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617499
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  • 3
    Electronic Resource
    Electronic Resource
    A study of structural perfection of interfaces in Si/SiGe superlattices (2000)
    Springer
    Crystallography reports 45 (2000), S. 661-669 
    Details
    ISSN: 1063-7745
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecular-beam epitaxy at different temperatures of the Si substrate has been carried out by high-resolution X-ray diffraction analysis, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). It is demonstrated that the combination of these methods makes it possible to describe in sufficient detail the distributions of the strains and Ge concentrations in the elastically strained superlattices and also to evaluate the sharpness of the layer interfaces. It is shown that the densitometry of electron microscope images of the superlattice cross-sections permits characterization of the relative sharpness of the layer interfaces and a qualitative representation of the Ge distribution throughout the thickness of the SiGe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1306580
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  • 4
    Electronic Resource
    Electronic Resource
    Very high two-dimensional hole gas mobilities in strained silicon germanium (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3470-3472 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to ≤13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950 °C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V−1 s−1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111244
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of Si/Si1−xGex/Si heterostructures by capacitance-transient spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4237-4243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level distributions have been investigated in B-doped Si/Si1−xGex/Si layers grown by molecular beam epitaxy using deep level transient spectroscopy. Broadening in the deep level spectra is discussed in terms of carrier emission over a band of deep level energies as has been considered for both alloy disorder and dislocations. The distortion observed in the deep level spectra in the vicinity of the upper Si/Si1−xGex heterojunction is suggested to be a consequence of the significant band bending that occurs in this region; the possible causes for this distortion are discussed. The deep states exhibit donor-like behavior and the origin of the electrical activity is considered to lie with metal point-defect/dislocation interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357332
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  • 6
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4990-4993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrashallow p+n junctions have been formed in silicon by low energy (5.5 keV) Ga+ implantation into n-type substrates. This avoids the use implantation of molecular species such as BF2+ or preamorphization with Ge+ or Si+, which degrade the integrity of p+n junctions in metastably strained SixGe1−x layers. High resolution secondary ion mass spectroscopy measurements indicate an implant peak at less than 10 nm, except for postanneal temperatures above 800 °C, for which severe loss of profile control was observed. Electrical characteristics of the implanted junctions were determined from diode current–voltage measurements and Hall data. At low anneal temperatures, these showed good rectification behavior, with an ideality factor of 1.1±0.1 and a reverse bias leakage of (approximate)3 μA cm−2 in a relatively large junction area of 5×10−2 cm2. The electrical properties of the p+n junctions were found to be sensitive to implant dose, improving with increasing dose. At 580 °C, implant doses were achieved that were completely activated at levels above previously published Ga equilibrium solubility data. For temperatures of 800 °C, reverse annealing occurred, observed as a reduction in carrier concentration with increasing anneal time and severe profile broadening. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366367
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  • 7
    Electronic Resource
    Electronic Resource
    The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance-voltage techniques (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1894-1899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage (C-V) profiling has been used to measure the apparent carrier concentration profiles in Si/Si1−xGex/Si structures for a range of Ge percentages. Using Kroemers analysis, good agreement has been found between theoretical valence band offsets and those determined from the experimental data. The validity of Kroemers analysis has been assessed in the presence of traps using a C-V simulation program. Under certain circumstances, large errors occur in the extracted valence band offset due to distortion of the apparent carrier concentration profile by traps. It is proposed that the experimental data presented here falls into a regime where minimal distortion is to be expected and is reflected by the accuracy of the extracted valence band offsets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354799
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  • 8
    Electronic Resource
    Electronic Resource
    Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3852-3856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron modulation-doped Si/SiGe heterojunctions have been grown by molecular beam epitaxy. The two-dimensional hole gas formed along the heterojunction, just inside the alloy, has a sheet density in the range 2–5×1011 cm−2 and a typical mobility at 5 K of 2000 cm2 V−1 s−1. An explanation for the magnitude of the mobility is sought by considering likely scattering mechanisms, namely those due to remote impurities, interface roughness, alloy disorder, and interface impurities. A self-consistent model is used to determine the sheet density in terms of structural and energy parameters and dopant concentrations in the heterostructure. It is shown that the presence of negatively charged impurities at the heterojunction provides the basis for a consistent interpretation of the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352895
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  • 9
    Electronic Resource
    Electronic Resource
    Dislocation imaging using transmission ion channeling (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2640-2653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface dislocations present in a Si0.85Ge0.15/Si sample have been imaged using the channeling scanning transmission ion microscopy (CSTIM) method with a 2 MeV proton beam 200 nm across. Groups of parallel dislocations gave dark bands of contrast down to ∼1.5 μm across, the contrast arising from dechanneling of the beam by the bent lattice planes. Tilting of the sample caused the band contrast to change and gave quantitative data concerning the local bending of the lattice planes. A low-angle boundary model was developed to describe the effect of the groups of dislocations on the channeling contrast. Channeling and topography contrast were obtained from mesa structures present on the sample. Improvements in the sensitivity of the CSTIM method are discussed. The dislocations in the sample were initially characterized by transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353081
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 118-125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doped layers were grown by silicon molecular beam epitaxy to establish incorporation processes at temperatures between 900 and 450 °C. For temperatures exceeding 650 °C a surface accumulated phase of boron was formed when doping levels exceeded solid solubility limits. The properties of this surface phase were used to determine solubility limits for boron in silicon. Above 750 °C, the measured equilibrium solubility limit was in the 1019-cm−3 range in good agreement with previously published annealing data and showing a gradual decrease with decreasing temperature. Below 650 °C, the processes leading to the formation of the surface phase were kinetically limited, manifested by a sharp increase in boron solubility limit, with completely activated levels above 1 × 1020 cm−3 realized. At intermediate growth temperatures the degree of dopant activation was found to be dependent on growth rate. The stability of fully activated highly-doped boron layers, grown at low temperatures, to ex situ annealing is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351363
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