Abstract
A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecular-beam epitaxy at different temperatures of the Si substrate has been carried out by high-resolution X-ray diffraction analysis, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). It is demonstrated that the combination of these methods makes it possible to describe in sufficient detail the distributions of the strains and Ge concentrations in the elastically strained superlattices and also to evaluate the sharpness of the layer interfaces. It is shown that the densitometry of electron microscope images of the superlattice cross-sections permits characterization of the relative sharpness of the layer interfaces and a qualitative representation of the Ge distribution throughout the thickness of the SiGe layers.
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Translated from Kristallografiya, Vol. 45, No. 4, 2000, pp. 722–730.
Original Russian Text Copyright © 2000 by Vdovin, Shcherbachev, Mironov, Parry, Parker.
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Vdovin, V.I., Shcherbachev, K.D., Mironov, M. et al. A study of structural perfection of interfaces in Si/SiGe superlattices. Crystallogr. Rep. 45, 661–669 (2000). https://doi.org/10.1134/1.1306580
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DOI: https://doi.org/10.1134/1.1306580