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  • Articles  (480)
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  • 1
    Electronic Resource
    Electronic Resource
    Measurement of adsorption and surface diffusion on homogeneous solid surfaces (1975)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 79 (1975), S. 885-888 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100576a008
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  • 2
    Electronic Resource
    Electronic Resource
    Study of copper silicide retardation effects on copper diffusion in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3822-3824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A B-buried layer with a dose of 1×1014 atoms/cm2 was introduced into p-doped Si at a depth of 2.2 μm to enhance copper diffusion via its inherent gettering effect. Copper was then introduced into silicon either via a low-energy implantation followed by a thermal anneal, or through the thermal drive in of physical vapor deposited (PVD) copper film. Secondary ion mass spectrometry depth profiling of both annealed samples later indicated that while substantial amounts of copper was gettered by the B layer in the former sample, no copper was gettered by the B-buried layer in the latter sample. Further analysis with an x-ray diffraction technique showed that copper silicide, Cu3Si was formed in the latter sample. It is thus surmised that the formation of this silicide layer impeded the diffusion of copper towards the B-buried layer. This work investigates the cause of CuSix formation and the underlying reasons for the lower mobility of Cu in PVD Cu film samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343518
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  • 3
    Electronic Resource
    Electronic Resource
    Crystal morphology and phase purity of diamond crystallites during bias enhanced nucleation and initial growth stages (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3354-3360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal morphologies and phase composition of diamond crystallites during bias enhanced nucleation and initial growth stages in microwave plasma chemical vapor deposition were investigated. Diamond nuclei were first formed in the central regions of substrates and then propagated to the sample edges. During the course of bias nucleation, excessive ion bombardment induced secondary nucleation sites on the already formed nuclei. The secondary nucleation deteriorated the overall alignment of the growing crystals. Hence, the elimination of secondary nucleation and homogeneous nucleation over substrates are fundamental requirements for the deposition of large-area uniformly oriented diamond films. Decreasing reactant pressure was found to be effective for improving plasma homogeneity and consequently nucleation uniformity. The results of bias enhanced nucleation within a pressure range from 8 to 20 Torr showed that the lower pressure of reactants enlarged the area of oriented diamond films. However, the optimum bias and duration of nucleation was found to be specific for each pressure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289071
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  • 4
    Electronic Resource
    Electronic Resource
    Bulk-quantity Si nanosphere chains prepared from semi-infinite length Si nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 727-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk-quantity Si nanosphere chains have been fabricated. This is accomplished via the spheroidization of Si nanowires of semi-infinite lengths. The process has been extensively investigated by transmission electron microscopy. The nanosphere chains consisted of equally spaced Si crystalline nanospheres connected by Si-oxide bars. The transition from Si nanowires to Si nanosphere chains was determined by the annealing temperature, ambient pressure, initial Si nanowire diameters, and the oxide state of the outer layers of Si nanowires. The relationships between the geometry (size and spacing) of Si nanospheres, the initial state (diameter and oxide state) of Si nanowires, and the experimental conditions are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328786
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  • 5
    Electronic Resource
    Electronic Resource
    Bit-shift performance investigations at different skew angles and for different media orientations : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5649-5651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bit-shift performance was investigated at different skew angles and for media with different orientation. Results indicate that the bit-shift value increases as the skew angle increases for both planar orientated media and near-isotropic media. As the skew angle increases, the off-track capability, described by the bit shift at different off-track distances, decreases and the bit-shift profile becomes asymmetric. Comparison of normalized bit-shift values (normalized according to the bit shift at 0° skew angle) shows that the bit shift of the near-isotropic media is not as sensitive to skew angle variation as the media with strong orientation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362270
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  • 6
    Electronic Resource
    Electronic Resource
    Organic electroluminescent devices by high-temperature processing and crystalline hole transporting layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3269-3271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallization and interdiffusion of organic layers have been widely considered to be important causes for performance degradation of organic electroluminescent devices. By using high substrate temperature during vapor deposition, we have fabricated organic electroluminescent devices with crystalline organic layers. Contrary to the common belief, substantial increases in luminescent efficiency and brightness have been observed in the device thus fabricated. Such devices also showed much improved storage stability against high humidity compared to the conventional ones with amorphous organic layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123316
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis of boron nitride nanotubes by means of excimer laser ablation at high temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1966-1968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron nitride nanotubes (BN-NTs) were synthesized by using excimer laser ablation at 1200 °C in different carrier gases. The main characteristic of the BN-NTs produced by this method is that nanotubes are of only one to three atomic layers thick, which could be attributed to the dominance of the axial growth rate over the radial growth rate. The diameter of the BN-NTs ranged from 1.5 to 8 nm. The tips of the BN-NTs are either a flat cap or of polygonal termination, in contrast to the conical ends of carbon nanotubes. The atomic ratio of boron to nitrogen as measured by means of parallel electron energy loss spectroscopy is 0.8, which is within the experimental error of the stoichiometry of hexagonal BN structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121236
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  • 8
    Electronic Resource
    Electronic Resource
    Oriented diamond growth on silicon (111) using a solid carbon source (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4187-4192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Textured diamond films have been grown on silicon (111) substrate by using hot filament chemical vapor deposition. A graphite plate immersed in hydrogen was used as the carbon source rather than the conventional gaseous methane source. During the nucleation period, a negative bias relative to the filaments was applied to the substrate. An epitaxial β-SiC layer was deposited during the bias treatment. Textured diamond film was subsequently grown on the β-SiC layer from the mixture of hydrogen and hydrocarbon species etched from the graphite. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367173
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  • 9
    Electronic Resource
    Electronic Resource
    New method to predict the magnetic properties of thin gauged Si–Fe sheets : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6483-6485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tertiary crystal growth method was used to fabricate thin gauged 3% Si–Fe sheets in order to reduce the thickness of the sheets without deteriorating soft magnetic properties. During the investigation, the magnetic properties of final annealed sheets were found to be directly related to the magnetic properties of final cold rolled sheets. X-ray and transmission electron microscopy were used to understand the above relation. It was found that the fraction of (110) grains at the surface of the final cold rolled sheets significantly affected the final magnetic properties of the final annealed sheets. On the basis of the above argument, the final magnetic properties of the thin gauged Si–Fe sheets can be predicted by the B10 values of the final cold rolled sheets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367702
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  • 10
    Electronic Resource
    Electronic Resource
    Tip artifacts in atomic force microscope imaging of ion bombarded nanostructures on germanium surfaces (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5859-5861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication, we present a study of tip artifacts in atomic force microscope images of nanometer-scale cellular structures created on germanium surfaces by ion bombardment. It is demonstrated that the appearance of a columnar/granular morphology is due to severe image distortion when the tip size is comparable with the mean cell/hole diameter. These tip artifacts can often be deconvoluted by inverting the image and the lateral extension of the cell/hole can be reproduced with reasonable accuracy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366454
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