ISSN:
1572-9605
Keywords:
TI-1223
;
thin films
;
MOCVD
;
fluoride
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Thin films of TI1Ba2Ca2Cu3O9+x have been grown on single crystal (110) LaAlO3 by a metal-organic chemical vapor deposition process employing Ba(hfa)2.mep, Ca(hfa)2.tet. and Cu(dpm)2 (hfa = hexafluoroacetylacetonate; dpm = dipivaloylmethanate; tet = tetraglyme; mep =methylethylpentaglyme) as the volatile metal sources. A subsequent phase-selective annealing procedure accomplishes thallination using TIF in a bulk oxide pellet. The resulting films are nearly phase-pure and highly oriented and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit transport measured Tc = 103 K and Jc 〉 104 A/cm2 (77 K. 0 T) and at low temperatures retain Jc 〉 105 A/cm2 (5 K, 4.5 T) as measured by magnetic hysteresis.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1022635424576
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