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  • 78.55.Cr  (1)
  • semiconductors  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/Al x Ga1−x As multiple quantum wells (1992)
    Springer
    Applied physics 55 (1992), S. 533-536 
    Details
    ISSN: 1432-0630
    Keywords: 73.20.Dx ; 78.55.Cr ; 78.65.Fa
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Hot exciton relaxation is observed in GaAs/Al x Ga1−x As multiple quantum wells. The photolumnescence excitation spectra of the localized exciton emission at low temperatures and excitation densities are composed of narrow equidistant peaks exactly separated by the GaAs LO-phonon energy (36 meV). The relaxation mechanism via LO-phonons is found to be important for localized excitons in multiple quantum wells with GaAs layer thicknesses of about 50 Å, where pronounced alloy fluctuations in the barriers provide a strong additional lateral potential which suppresses the dissociation of hot excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331669
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  • 2
    Electronic Resource
    Electronic Resource
    Near-field Optical Spectroscopy of Single GaAs Quantum Wires (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 583-592 
    Details
    ISSN: 0142-2421
    Keywords: near-field microscopy ; semiconductors ; quantum wires ; photoluminescence spectroscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The nanoscopic room temperature optical properties of single quantum wires are characterized by a combination of near-field photoluminescence and photoluminescence excitation spectroscopy. Single GaAs quantum wires with a 50 nm lateral dimension are grown at the edge of 15 nm high mesa stripes on patterned GaAs(311) surfaces. Wire formation relies on the preferential migration of Ga atoms from a GaAs layer on the mesa top and bottom towards the sidewall. Spatially resolved photoluminescence spectra separate quantum wire and quantum well emission and image the diffusion of photoexcited carriers into the wires. Photoluminescence excitation spectra give insight into the absorption spectrum of the wires and the spectral position of different interband transitions in the one-dimensional carrier system. They allow the change in local thickness of the GaAs quantum well due to the migration process to be monitored directly with subwavelength spatial resolution. Both the trapping of carriers into the wire and the detrapping of carriers generated within the wire into the surrounding quantum well states are separately resolved.© 1997 John Wiley & Sons, Ltd.
    Type of Medium: Electronic Resource
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