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  • 1
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    Laser furnace and method for zone refining of semiconductor wafers (1988)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).
    Keywords: Solid-State Physics
    Format: application/pdf
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