ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Phenylalanine and tyrosine transfer RNAs encoded by Tetrahymena pyriformis mitochondrial DNA: primary sequence, post-transcriptional modifications, and gene localization (1985)
    Springer
    Current genetics 9 (1985), S. 389-393 
    Details
    ISSN: 1432-0983
    Keywords: Tetrahymena ; Mitochondria ; tRNA ; Sequences
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary We have isolated Phe and Tyr tRNAs from Tetrahymena pyriformis mitochondria and have determined that these are “native” species, encoded by the mtDNA. A single gene for the tRNAPhe has been positioned 12–14 kbp from the left end of the linear Tetrahymena mtDNA, while duplicate tRNATyr genes have been localized within the inverted terminal repeats of this genome. Primary sequence analysis demonstrates that the tRNATyr has all of the characteristic primary and secondary structural features of a normal tRNA; however, the tRNAPhe displays several atypical features, including (i) replacement of the usual Tψ sequence by UC, (ii) a U - U pair in the TψC stem, and (iii) an extra 5′-nucleotide (U).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00421610
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    facet.materialart.
    Unknown
    Microwave properties of peeled HEMT devices sapphire substrates (1992)
    In:  CASI
    Details
    Publication Date: 2013-08-29
    Description: The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.
    Keywords: SOLID-STATE PHYSICS
    Type: Solid State Technology Branch of NASA Lewis Research Center; p 123-126
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...