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  • 1
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    Electrochemical characterization of p(+)n and n(+)p diffused InP structures (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The relatively well documented and widely used electrolytes for characterization and processing of Si and GaAs-related materials and structures by electrochemical methods are of little or no use with InP because the electrolytes presently used either dissolve the surface preferentially at the defect areas or form residual oxides and introduce a large density of surface states. Using an electrolyte which was newly developed for anodic dissolution of InP, and was named the 'FAP' electrolyte, accurate characterization of InP related structures including nature and density of surface states, defect density, and net majority carrier concentration, all as functions of depth was performed. A step-by-step optimization of n(+)p and p(+)n InP structures made by thermal diffusion was done using the electrochemical techniques, and resulted in high performance homojunction InP structures.
    Keywords: SOLID-STATE PHYSICS
    Type: Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12); p 33-42
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Diffusion length damage coefficient and annealing studies in proton-irradiated InP (1993)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-106262 , E-7988 , NAS 1.15:106262 , International Conference on Indium Phosphide and Related Materials; Apr 18, 1993 - Apr 22, 1993; Paris; France
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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