ISSN:
1432-0630
Schlagwort(e):
PACS: 61.72–y; 61.80.Hg; 78.70.Bj
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract. The defect evolution as a function of the annealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6×1017 neutrons/cm2. Positron lifetime spectroscopy has been used and the results compared with infrared absorption measurements. Vacancy-H, vacancy-2H, vacancy-O-H and divacancy complexes with m hydrogen atoms (m〈6) have been identified for the first time as possible positron traps.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF01577618
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