Abstract
The defect evolution as a function of the annealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6×1017 neutrons/cm2. Positron lifetime spectroscopy has been used and the results compared with infrated absorption measurements. Vacancy-H, vacancy-2H, vacancy-O−H and divacancy complexes withm hydrogen atoms (m<6) have been identified for the first time as possible positron traps.
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