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  • 1
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    Compact, Single-Stage MMIC InP HEMT Amplifier (2008)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.
    Keywords: Electronics and Electrical Engineering
    Type: NPO-44962 , NASA Tech Briefs, July 2008; 13
    Format: application/pdf
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  • 2
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    Miniature MMIC Low Mass/Power Radiometer Modules for the 180 GHz GeoSTAR Array (2010)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: We have developed and demonstrated miniature 180 GHz Monolithic Microwave Integrated Circuit (MMIC) radiometer modules that have low noise temperature, low mass and low power consumption. These modules will enable the Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) of the Precipitation and All-weather Temperature and Humidity (PATH) Mission for atmospheric temperature and humidity profiling. The GeoSTAR instrument has an array of hundreds of receivers. Technology that was developed included Indium Phosphide (InP) MMIC Low Noise Amplifiers (LNAs) and second harmonic MMIC mixers and I-Q mixers, surface mount Multi-Chip Module (MCM) packages at 180 GHz, and interferometric array at 180 GHz. A complete MMIC chip set for the 180 GHz receiver modules (LNAs and I-Q Second harmonic mixer) was developed. The MMIC LNAs had more than 50% lower noise temperature (NT=300K) than previous state-of-art and MMIC I-Q mixers demonstrated low LO power (3 dBm). Two lots of MMIC wafers were processed with very high DC transconductance of up to 2800 mS/mm for the 35 nm gate length devices. Based on these MMICs a 180 GHz Multichip Module was developed that had a factor of 100 lower mass/volume (16x18x4.5 mm3, 3g) than previous generation 180 GHz receivers.
    Keywords: Electronics and Electrical Engineering
    Type: ESTF 2010 (Earth Science Technology Forum); Jun 22, 2010; Washington, DC; United States
    Format: text
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  • 3
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    Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate (2006)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Compound Semiconductor Integrated Circuits (CSIC) Symposium; Nov 12, 2006; San Antonio, TX; United States
    Format: text
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  • 4
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    First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies (2008)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Microwave and Wireless Components Letters, Vol. 18, No. 6, June 2008 (ISSN 1531-1309); 18; 6; 419-421
    Format: text
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  • 5
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    180-GHz I-Q Second Harmonic Resistive Mixer MMIC (2010)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: An indium phosphide MMIC (monolithic microwave integrated circuit) mixer was developed, processed, and tested in the NGC 35-nm-gate-length HEMT (high electron mobility transistor) process. This innovation is very compact in size and operates with very low LO power. Because it is a resistive mixer, this innovation does not require DC power. This is an enabling technology for the miniature receiver modules for the GeoSTAR instrument, which is the only viable option for the NRC decadal study mission PATH.
    Keywords: Electronics and Electrical Engineering
    Type: NPO-47443 , NASA Tech Briefs, December 2010; 6
    Format: application/pdf
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  • 6
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    Miniature Low-Noise G-Band I-Q Receiver (2010)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: Weather forecasting, hurricane tracking, and atmospheric science applications depend on humidity sounding of atmosphere. Current instruments provide these measurements from groundbased, airborne, and low Earth orbit (LEO) satellites by measuring radiometric temperature on the flanks of the 183-GHz water vapor line. Miniature, low-noise receivers have been designed that will enable these measurements from a geostationary, thinned array sounder, which is based on hundreds of low-noise receivers that convert the 180-GHz signal directly to baseband in-phase and in-quadrature signals for digitization and correlation. The developed receivers provide a noise temperature of 450 K from 165 to 183 GHz (NF = 4.1 dB), and have a mass of 3 g while consuming 24 mW of power. These are the most sensitive broadband I-Q receivers at this frequency range that operate at room temperature, and are significantly lower in mass and power consumption than previously reported receivers.
    Keywords: Electronics and Electrical Engineering
    Type: NPO-47442 , NASA Tech Briefs, November 2010; 9
    Format: application/pdf
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  • 7
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    HEMT Amplifiers and Equipment for their On-Wafer Testing (2008)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.
    Keywords: Electronics and Electrical Engineering
    Type: NPO-45022 , NASA Tech Briefs, September 2008; 12-13
    Format: application/pdf
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  • 8
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    Broadband Characterization of a 100 to 180 GHz Amplifier (2007)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Aerospace Conference; Mar 01, 2007 - Mar 08, 2007; Big Sky, MT; United States
    Format: text
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