ALBERT

Description: Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to future NASA missions. The Global Atmospheric Composition Mission (GACM) in the NRC Decadel Survey will need low-noise amplifiers with extremely low noise temperatures, either at room temperature or for cryogenic applications, for atmospheric remote sensing.

Description: New circuits have been designed and fabricated with operating frequencies over 325 GHz. In order to measure S-parameters of these circuits, an extensive process of wafer dicing and packaging, and waveguide transition design, fabrication, and packaging would be required. This is a costly and time-consuming process before the circuit can be tested in waveguide. The new probes and calibration procedures will simplify the testing process. New on-wafer probes, and a procedure for their calibration, have been developed that allow fast and inexpensive S-parameter characterization of circuits in the 325 -508 -GHz frequency band. The on-wafer probes transition from rectangular waveguide to coplanar waveguide probe tips with 40- m nominal signal-to-ground pin pitch so as to allow for probing circuits on a wafer. The probes with bias tees have been optimized for minimal insertion loss and maximum return loss when placed on 50-ohm structures to allow for calibration. The calibration process has been developed using the Thru-Reflect-Line Agilent algorithm with JPL determined calibration structures and calibration coefficients for the algorithm. This new test capability is presently unique to JPL. With it, researchers will be able to better develop circuits such as low-noise amplifiers, power amplifiers, multipliers, and mixers for heterodyne receivers in the 325-508-GHz frequency band for remote sensing/spectroscopy.

Description: An integrated waveguide-to-MMIC (monolithic microwave integrated circuit) chip operating in the 300-GHz range is designed to operate well on high-permittivity semiconductor substrates typical for an MMIC amplifier, and allows a wider MMIC substrate to be used, enabling integration with larger MMICs (power amplifiers). The waveguide-to- CBCPW (conductor-backed coplanar waveguide) transition topology is based on an integrated dipole placed in the E-plane of the waveguide module. It demonstrates low loss and good impedance matching. Measurement and simulation demonstrate that the loss of the transition and waveguide loss is less than 1-dB over a 340-to-380-GHz bandwidth. A transition is inserted along the propagation direction of the waveguide. This transition uses a planar dipole aligned with the maximum E-field of the TE10 waveguide mode as an inter face between the waveguide and the MMIC. Mode conversion between the coplanar striplines (CPS) that feed the dipole and the CBCPW transmission line is accomplished using a simple air-bridge structure. The bottom side ground plane is truncated at the same reference as the top-side ground plane, leaving the end of the MMIC suspended in air.

Description: A document presents data from tests of a low-noise amplifier module operating in the frequency range from 290 to 340 GHz said to be the highest-frequency low-noise, solid-state amplifier ever developed. The module comprised a three-stage monolithic microwave integrated circuit (MMIC) amplifier integrated with radial probe MMIC/waveguide transitions and contained in a compact waveguide package, all according to the concepts described in the immediately preceding article and in the referenced prior article, "Integrated Radial Probe Transition From MMIC to Waveguide" (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. The tests included measurements by the Y-factor method, in which noise figures are measured repeatedly with an input noise source alternating between an "on" (hot-load) condition and an "off" (cold-load) condition. (The Y factor is defined as the ratio between the "on" and "off" noise power levels.) The test results showed that, among other things, the module exhibited a minimum noise figure of about 8.7 dB at 325 GHz and that the gain at that frequency under the bias conditions that produced the minimum noise figure was between about 9 and 10 dB.

Description: A document presents an update on the innovation reported in Integrated Radial Probe Transition From MMIC to Waveguide (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. To recapitulate: To enable operation or testing of a monolithic microwave integrated circuit (MMIC), it is necessary to mount the MMIC in a waveguide package that typically has cross-sectional waveguide dimensions of the order of a few hundred microns. A radial probe transition between an MMIC operating at 340 GHz and a waveguide had been designed (but not yet built and tested) to be fabricated as part of a monolithic unit that would include the MMIC. The radial probe could readily be integrated with an MMIC amplifier because the design provided for fabrication of the transition on a substrate of the same material (InP) and thickness (50 m) typical of substrates of MMICs that can operate above 300 GHz. As illustrated in the updated document by drawings, photographs, and plots of test data, the concept has now been realized by designing, fabricating, and testing several MMIC/radial- probe integrated-circuit chips and designing and fabricating a waveguide package to contain each chip.

Description: A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

Description: We report on a full two-port on-wafer vector network analyzer test set for the 220-325 GHz (WR3) frequency band. The test set utilizes Oleson Microwave Labs frequency extenders with the Agilent 8510C network analyzer. Two port on-wafer measurements are made with GGB Industries coplanar waveguide (CPW) probes. With this test set we have measured the WR3 band S-parameters of amplifiers on-wafer, and the characteristics of the CPW wafer probes. Results for a three stage InP HEMT amplifier show 10 dB gain at 235 GHz [1], and that of a single stage amplifier, 2.9 dB gain at 231 GHz. The approximate upper limit of loss per CPW probe range from 3.0 to 4.8 dB across the WR3 frequency band.

Description: A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.

Description: Recent experiments were performed in which return loss and insertion loss of waveguide test assemblies in the frequency range from 325 to 508 GHz were measured by use of a swept-frequency two-port vector network analyzer (VNA) test set. The experiments were part of a continuing effort to develop means of characterizing passive and active electronic components and systems operating at ever increasing frequencies. The waveguide test assemblies comprised WR-2.2 end sections collinear with WR-3.3 middle sections. The test set, assembled from commercially available components, included a 50-GHz VNA scattering- parameter test set and external signal synthesizers, augmented with recently developed frequency extenders, and further augmented with attenuators and amplifiers as needed to adjust radiofrequency and intermediate-frequency power levels between the aforementioned components. The tests included line-reflect-line calibration procedures, using WR-2.2 waveguide shims as the "line" standards and waveguide flange short circuits as the "reflect" standards. Calibrated dynamic ranges somewhat greater than about 20 dB for return loss and 35 dB for insertion loss were achieved. The measurement data of the test assemblies were found to substantially agree with results of computational simulations.

Description: Metal emitter structures in a class of developmental InP-based high-speed heterojunction bipolar transistors (HBTs) have been redesigned to have T-shaped cross sections. T-cross-section metal features have been widely used in Schottky diodes and high-electron-mobility transistors, but not in HBTs. As explained, the purpose served by the present T cross-sectional shapes is to increase fabrication yields beyond those achievable with the prior cross-sectional shapes.