ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Electron beam induced current imaging has been used to monitor the dynamic changes of the metal-semiconductor interface of AuGeNi/n-GaAs during annealing at 300°C. The reacted interface was then revealed by argon ion etching of the metal overlayer, and analyzed by secondary electron and Auger electron imaging. The combined EBIC-Auger imaging of the reacted interface indicates that the formation of the ohmic contact starts at localized areas where small Ni- and As-rich grains are formed. The results also show that this combined EBIC-Auger imaging technique is particularly suitable for investigating the mechanism of degradation of Schottky contacts.
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740111203
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