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  • 72.80.Ey  (2)
  • Springer  (2)
  • PANGAEA
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  • Springer  (2)
  • PANGAEA
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  • 1
    Electronic Resource
    Electronic Resource
    Dynamics of resonant and non-resonant tunneling in asymmetric coupled quantum wells (1993)
    Springer
    Applied physics 56 (1993), S. 40-42 
    Details
    ISSN: 1432-0630
    Keywords: 73.40.Gk ; 72.80.Ey ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Within the framework of the effective mass approximation, coherent oscillations of a photoexcited electron wave packet in an asymmetric coupled quantum well structure have been studied using a time-dependent Schrödinger equation. In the method of calculation, the continuity of the current across a semiconductor heterojunction is considered. The amplitude and period of the electronic is obtained and in the case of high bias, it is found the existence of electric field-induced tunelling to semiconductor bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00351901
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ge diffusion into GaAs by pulsed laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 191-196 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Ds ; 72.80.Ey
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ge diffusion into GaAs from thin evaporated layers as sources is reported. Irradiation with aQ-switched ruby laser gives rise ton-type diffused layers of a thickness from 240 to 710 Å. A strong compensation of the diffused layers, that cannot be removed by thermal annealing, was observed. From the present experimental results it can be inferred that the diffusion coefficient increases at the melting point by 5 to 6 orders of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00939263
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    Paper (German National Licenses)
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