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  • 1
    Electronic Resource
    Electronic Resource
    Materials and device properties of pseudomorphic In x Ga1−x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0〈x〈0.5) (1991)
    Springer
    Applied physics 53 (1991), S. 109-113 
    Details
    ISSN: 1432-0630
    Keywords: 6855 ; 7280E ; 7340L
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Modulation doped Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy. Initially the critical layer thickness for InAs mole fractions up to 0.5 was investigated. For InAs mole fractions up to 0.35 good agreement with theoretical considerations was observed. For higher InAs mole fractions disagreement occurred due to a strong decrease of the critical layer thickness. The carrier concentration for Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures with a constant In x Ga1−x As quantum well width was investigated as a function of InAs mole fraction. If the In x Ga1−x As quantum well width is grown at the critical layer thickness the maximum carrier concentration is obtained for an InAs mole fraction of 0.37. A considerable higher carrier concentration in comparison to single-sided δ-doped structures was obtained for the structures with δ-doping on both sides of the In x Ga1−x As quantum well. Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures with InAs mole fractions in the range 0–0.35 were fabricated for device application. For the presented field effect transistors best device performance was obtained for InAs mole fractions in the range 0.25–0.3. For the field effect transistors with an InAs mole fraction of 0.25 and a gate length of 0.15 μm a f T of 115 GHz was measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323868
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  • 2
    Electronic Resource
    Electronic Resource
    Gas chromatographic separation of sugars by on-column injection on glass capillary columns (1984)
    Weinheim : Wiley-Blackwell
    Journal of High Resolution Chromatography 7 (1984), S. 558-562 
    Details
    ISSN: 0935-6304
    Keywords: Gas chromatography, GC ; Capillary columns, glass ; On-column injection ; Sugars ; Oligosaccharides ; Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Sugars were separated gas chromatographically on short apolar glass capillary columns by using cold, on-column injection (OCI) techniques. After silylation, oligomers up to the hexasaccharides could be efficiently separated in resonable retention times. Response factors of silylated sugars were determined as a function of varying sample amounts and concentrations. The optimum injection amount was found to be 1 μl in heptane as solvent.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jhrc.1240071002
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