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  • Articles  (2)
  • 61.70.Tm  (2)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (2)
  • Political Science
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  • Articles  (2)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (2)
  • Political Science
  • Physics  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Laser melting of GaAs covered with thin metal layers (1990)
    Springer
    Applied physics 51 (1990), S. 437-445 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Ds ; 72.80.Ey
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract GaAs melting simulations with a pulsed ruby laser are reported. The presence of a thin metal layer deposited on the GaAs surface gives rise to a reduction in the melting threshold and to an increase of melted depths when compared with nude GaAs surfaces. Melting thresholds around 0.3 J/cm2 for nude GaAs surface and slightly below 0.25 J/cm2 for GaAs covered with a 120 Å tin layer are predicted in reasonable agreement with experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348387
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ge diffusion into GaAs by pulsed laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 191-196 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Ds ; 72.80.Ey
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ge diffusion into GaAs from thin evaporated layers as sources is reported. Irradiation with aQ-switched ruby laser gives rise ton-type diffused layers of a thickness from 240 to 710 Å. A strong compensation of the diffused layers, that cannot be removed by thermal annealing, was observed. From the present experimental results it can be inferred that the diffusion coefficient increases at the melting point by 5 to 6 orders of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00939263
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    Paper (German National Licenses)
    Fulltext
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