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  • 61.70.Sk  (3)
  • 61.80  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Electrical activation of boron-implanted silicon during rapid thermal annealing (1988)
    Springer
    Applied physics 47 (1988), S. 359-366 
    Details
    ISSN: 1432-0630
    Keywords: 61.70-r ; 61.70.At ; 61.70.Sk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical activation of boron implanted in crystalline and preamorphized silicon has been investigated during rapid thermal annealing performed with halogen lamps. Samples implanted with B+ fluences ranging between 5×1014 and 1×1016cm−2 and treated at temperatures between 900°C and 1100°C have been examined. When boron is implanted in crystalline Si, activation proceeds slowly atT〈1000°C and cannot be completed in times typical of rapid thermal annealing (a few tens of seconds). The analysis of carrier profiles indicates that the time constant for activation is strongly affected by local damage and dopant concentration. If the total boron concentration exceeds equilibrium solubility, precipitation occurs concomitant to activation, even if the substitutional boron fraction is still lower than equilibrium solubility. ForT≧1000°C complete activation is obtained in times of about 10 s. In the case of preamorphized Si the activation occurs very quickly, during the recrystallization of the amorphous layer, for all the examined temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615499
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of nucleation on the kinetics of boron precipitation in silicon (1987)
    Springer
    Applied physics 44 (1987), S. 135-141 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Sk ; 64.75.+g
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A study of the precipitation of boron implanted into pre-amorphized silicon has been carried out following several thermal processes in the temperature range between 550 and 900 °C. It will be shown that the formation of inactive boron takes place even during a low-temperature solid-phase epitaxy of the regrowing layer, when the starting concentration level exceeds about 3.5×1020 atoms/cm3. The presence, at the beginning of the annealing process, of inactive atoms in the form of small aggregates which behave as nucleation centers, markedly affects the precipitation kinetics during the thermal treatments. In these conditions the experimental data follow the Ham's theory of precipitation. On the contrary, if all the dopant is incorporated in the lattice side, nucleation is the limiting factor for boron deactivation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626414
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation (1989)
    Springer
    Applied physics 48 (1989), S. 255-260 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619395
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers (1991)
    Springer
    Applied physics 53 (1991), S. 222-226 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 30 keV boron ions are implanted at doses of 2×1014 and 2×1015 cm−2 in 〈100〉 silicon wafers kept at room or liquid-nitrogen temperatures. The samples are analyzed by double-crystal X-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry before and after furnace annealing at 800°C. The low-dose implant does not amorphize the substrate at any of the temperatures, and residual defects together with a remarkably enhanced boron diffusion are observed after annealing. The high-dose implant amorphizes the substrate only at low temperature. In this case, unlike the room-temperature implant, the absence of any residual defect, the incorporation of the dopant in substitutional position and a negligible profile braodening of boron are obtained after annealing. In principle, this process proves itself a promising step for the fabrication of p +/n shallow junctions with good electrical characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324256
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical activation of boron-implanted silicon during rapid thermal annealing (1988)
    Springer
    Applied physics 47 (1988), S. 359-366 
    Details
    ISSN: 1432-0630
    Keywords: 61.70-r ; 61.70.At ; 61.70.Sk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical activation of boron implanted in crystalline and preamorphized silicon has been investigated during rapid thermal annealing performed with halogen lamps. Samples implanted with B+ fluences ranging between 5×1014 and 1×1016cm−2 and treated at temperatures between 900°C and 1100°C have been examined. When boron is implanted in crystalline Si, activation proceeds slowly atT〈1000°C and cannot be completed in times typical of rapid thermal annealing (a few tens of seconds). The analysis of carrier profiles indicates that the time constant for activation is strongly affected by local damage and dopant concentration. If the total boron concentration exceeds equilibrium solubility, precipitation occurs concomitant to activation, even if the substitutional boron fraction is still lower than equilibrium solubility. ForT≧1000°C complete activation is obtained in times of about 10 s. In the case of preamorphized Si the activation occurs very quickly, during the recrystallization of the amorphous layer, for all the examined temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615499
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    Paper (German National Licenses)
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