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Influence of nucleation on the kinetics of boron precipitation in silicon

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Abstract

A study of the precipitation of boron implanted into pre-amorphized silicon has been carried out following several thermal processes in the temperature range between 550 and 900 °C. It will be shown that the formation of inactive boron takes place even during a low-temperature solid-phase epitaxy of the regrowing layer, when the starting concentration level exceeds about 3.5×1020 atoms/cm3. The presence, at the beginning of the annealing process, of inactive atoms in the form of small aggregates which behave as nucleation centers, markedly affects the precipitation kinetics during the thermal treatments. In these conditions the experimental data follow the Ham's theory of precipitation. On the contrary, if all the dopant is incorporated in the lattice side, nucleation is the limiting factor for boron deactivation.

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Author notes

  1. S. Guimaraes

    Present address: Instituto de Fisica e Quimica de Sao Carlos, C.P. 369 CEP, 13569, Sao Carlos, Sao Paolo, Brazil

Authors and Affiliations

  1. CNR - Istituto LAMEL, Via Castagnoli, 1, I-40126, Bologna, Italy

    E. Landi, S. Guimaraes & S. Solmi

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Landi, E., Guimaraes, S. & Solmi, S. Influence of nucleation on the kinetics of boron precipitation in silicon. Appl. Phys. A 44, 135–141 (1987). https://doi.org/10.1007/BF00626414

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  • DOI: https://doi.org/10.1007/BF00626414

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