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  • 1
    Electronic Resource
    Electronic Resource
    Pulsed electron-beam annealing of high-dose arsenic implanted silicon (1980)
    Springer
    Applied physics 22 (1980), S. 385-388 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of pulsed electron-beam annealing of high-dose As implanted {111} Si single crystals has been studied. The depth distributions and lattice location of the As atoms were obtained using MeV4He+ backscattering and channeling technique. The implantation energy was 100 keV with a total dose of 3.5·1016/cm2. Above the threshold energy of 0.9 J/cm2 the single-crystal transition was observed with about 95% of the As atoms on substitutional lattice sites. This leads to an As concentration of 2·1021/cm3 which was demonstrated to be a metastable one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901061
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Supersaturated Si-As alloy formation by ion implantation and pulsed electron beam annealing (1982)
    Springer
    Applied physics 28 (1982), S. 99-102 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Supersaturated surface alloys produced by very high dose (0.8−2.6×1017cm−2) implantation of As-ions into silicon and subsequent pulsed electron-beam annealing have been investigated by means of the channeling technique. The maximum solubility limit of 7×1021 As/cm3 has been determined. It exceeds the equilibrium solubility limit by more than a factor of 4. Angular scan measurements indicated that for doses above 1×1017cm−2 As atoms are displaced by about 0.12 Å from the regular lattice sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617137
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    Paper (German National Licenses)
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