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  • Wiley-Blackwell  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Photochemistry of azide-phenolic resin photoresists (1986)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 26 (1986), S. 1090-1095 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The photochemistry of a negative working photoresist, MRL, composed of poly(4-hydroxystyrene) and an aromatic monoazide compound, 4-azido-4′-methoxychalcone, has been examined, The major products of photolysis of MRL films are primary amine, secondary amine, and poly(4-hydroxystyrene) with increased molecular weight. The polymeric secondary amines are generated from the nitrene insertion into the backbone carbon-hydrogen bonds of the polymer. Hydrogen abstraction from the polymer by the nitrene with subsequent polymer radical recombination results in the increase in the molecular weight of the poly(4-hydroxystyrene), rendering the exposed areas insoluble in both aqueous alkaline and organic developers. Rapid decrease in the dissolution rate of the poly(4-hy-droxystyrene) with increasing molecular weight is separately ascertained.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760261603
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  • 2
    Electronic Resource
    Electronic Resource
    Acid formation from various sulfonates in a chemical amplification positive resist (1992)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 32 (1992), S. 1511-1515 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The quantum yield for acid generation from alkyl and arylsulfonic acid esters of pyrogallol was measured in resist films composed of a sulfonate, tBOC-BA, and novolak resin. It was found that the quantum yield increases with decreasing molecular size of the sulfonyl group, which can explain the differences in sensitivity of the resist systems. Methanesulfonic acid esters of various phenol derivatives were synthesized to see the effect of backbone structure on the efficiency of acid generation. The sensitivity measurement of resists containing these sulfonates indicates that the number of sulfonyloxy groups bonded to a benzene ring is important. The higher number of the sulfonyloxy groups gives a higher efficiency of acid generation.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760322012
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  • 3
    Electronic Resource
    Electronic Resource
    ARCOR, a new photolithography technique with antireflective coating on resist (1992)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 32 (1992), S. 1545-1549 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The multiple interference effect is one of the major causes of the fluctuation in critical dimension control (CD) and in mark detection for alignment. Suppressing this effect is critical for future photolithography. We propose a new photolithography technique called anti reflective coating on resist (ARCOR), which improves linewidth accuracy and overlay accuracy by suppressing multiple interference. ARCOR consists of relatively simple processes: A clear antireflective film is spun onto the resist prior to the mark detecting for alignment and exposure. The film is subsequently removed and the resist developed in the conventional way. ARCOR differs from ARC, which suppresses the reflection at the resist/substrate interface. ARCOR suppresses the reflection at the air/resist interface. ARCOR allows mark detection and exposure without light intensity-loss and multiple interference. The experiments mainly examine polysiloxane and perfluoroalkylpolyether as ARCOR materials. It is shown that linewidth accuracy can be improved from 0.3 to 0.03 μm. The signal-to-noise ratio of the alignment signal is drastically improved, and the overlay error is about half that of the conventional method. ARCOR is also effective for directly measuring the reflectivity at the resist/substrate interface, which is a key parameter of the multiple interference effect and the halation. Using ARCOR and a thin resist film, the measured ratio of reflected light to incident light indicates the reflectivity at the resist/substrate interface. Because, the probe light does not reflect off the resist surface and the intensity-loss at the resist surface is suppressed. With perfluoroalkylpolyether film, the measurement error is ∼ 1.5%.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760322018
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