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  • 1
    Electronic Resource
    Electronic Resource
    Insolubilization mechanism of a chemical amplification negative-resist system utilizing an acid-catalyzed silanol condensation reaction (1991)
    s.l. : American Chemical Society
    Chemistry of materials 3 (1991), S. 621-625 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00016a012
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties of Ni2In type (Co1–xMnx)65Ge35 compounds : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5238-5240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high temperature phase of (Co1–xMnx) 65Ge35 is found to be of the hexagonal Ni2In type in the range of 0≤x≤0.6. Co2Ge is Pauli paramagnetic, and ferromagnetism is induced with substitution of Mn for Co. Magnetization measurement and x-ray diffraction experiments for these compounds have been performed. The x dependences of the Curie temperature Tc and magnetization show a maximum near composition x=0.25. X-ray studies show that the lattice constants c are minimum at x=0.25. The x dependence of the relative intensities of x-ray lines suggests that the Mn and Co atoms at 2(a) sites in the compound x=0.25 align alternately in the c direction. The Co atoms at 2(d) site and the Ge atoms at 2(c) site shift along the c direction are found. The neutron diffraction experiment of x=0.25 also support such crystal structure. Maximum of Curie temperature and magnetization of compounds near x=0.25 are discussed with the ordering of Mn and Co atoms in the crystal lattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362439
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  • 3
    Electronic Resource
    Electronic Resource
    Operational characteristics of a metal vapor vacuum arc ion source : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 589-591 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The MEVVA ion source can produce high current pulsed beams of metallic ions using a metal vapor vacuum arc discharge as the plasma medium from which the ions are extracted. In this study, the operational characteristics of the MEVVA IV ion sources are summarized. Results are presented of measurements of the ion beam current as a function of arc current over a range of extraction voltage. Ti, Ta, and Pb were examined as the cathode materials. The arc current ranged from 50 to 250 A and the extraction voltage from 10 to 80 kV. The ion beam current was measured at two different distances from the ion source using Faraday cups, so as to investigate the beam divergence. Additionally, the cathode erosion rates were measured. Optimum operating conditions of the MEVVA ion source were determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141926
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  • 4
    Electronic Resource
    Electronic Resource
    Performance of a high-current metal vapor vacuum arc ion source (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3775-3782 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The operational characteristics of a metal vapor vacuum arc ion source have been studied. The beam current has been measured as a function of ion source extraction voltage (5–80 kV), arc current (50–250 A), metal-ion species (Ti, Ta, and Pb), and extractor grid spacing (0.89 and 0.38 cm). The measured beam current ranged up to 700 mA. The parametric variation of beam current is compared to that expected from the Child–Langmuir equation and excellent agreement is found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141552
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of polymer nanodots with single electron patterning technology (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1799-1801 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polymer nanodots 3–5 nm in diameter have been fabricated using conventional polymer resists. Negative-type resists of cresol novolak resins combined with crosslinkers are exposed with a uniform 50-kV electron beam. The uniform beam is considered to be a flux of ultrafine beams of individual electrons that causes crosslink reactions. By selecting electron beam doses and wet development conditions, dense patterns of polymer nanodots are successfully obtained. We call this process "single electron patterning technology'' (SEPT). Sizes of the nanodots reflect the molecular-weight distribution characteristics of the resin polymers. A resist polymer with a small molecular distribution (polydispersity) leads to uniform dots. The dots are thought to be polymer microgels that consist of a few crosslinked resin molecules, or the molecules themselves. X-ray photoelectron spectroscopy confirms that the dots consist of resist polymers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116017
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  • 6
    Electronic Resource
    Electronic Resource
    Nano edge roughness in polymer resist patterns (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 764-766 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrasmall edge roughness in delineated patterns (nano edge roughness) is investigated in nanostructures made of negative-type electron beam polymer resists by atomic force microscope measurements. Very narrow isolated lines 10–20 nm wide are fabricated with a finely focused electron beam provided by a scanning electron microscope. A chemical amplification novolak resin-based resist shows nano edge roughness which cannot be neglected in nanofabrication. To investigate the origin of the roughness, conventional two-component resist systems are microscopically compared. An azide polyvinylphenol-based resist and an azide novolak resin-based resist are used. The novolak resin-based resist exhibits a rougher surface than the polyvinylphenol-based one. This result suggests that the polymer structures of the base resins cause nano edge roughness of a chemical amplification resist in connection with the acid diffusion during the post-exposure bake process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109901
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  • 7
    Electronic Resource
    Electronic Resource
    Photochemistry of azide-phenolic resin photoresists (1986)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 26 (1986), S. 1090-1095 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The photochemistry of a negative working photoresist, MRL, composed of poly(4-hydroxystyrene) and an aromatic monoazide compound, 4-azido-4′-methoxychalcone, has been examined, The major products of photolysis of MRL films are primary amine, secondary amine, and poly(4-hydroxystyrene) with increased molecular weight. The polymeric secondary amines are generated from the nitrene insertion into the backbone carbon-hydrogen bonds of the polymer. Hydrogen abstraction from the polymer by the nitrene with subsequent polymer radical recombination results in the increase in the molecular weight of the poly(4-hydroxystyrene), rendering the exposed areas insoluble in both aqueous alkaline and organic developers. Rapid decrease in the dissolution rate of the poly(4-hy-droxystyrene) with increasing molecular weight is separately ascertained.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760261603
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  • 8
    Electronic Resource
    Electronic Resource
    Acid formation from various sulfonates in a chemical amplification positive resist (1992)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 32 (1992), S. 1511-1515 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The quantum yield for acid generation from alkyl and arylsulfonic acid esters of pyrogallol was measured in resist films composed of a sulfonate, tBOC-BA, and novolak resin. It was found that the quantum yield increases with decreasing molecular size of the sulfonyl group, which can explain the differences in sensitivity of the resist systems. Methanesulfonic acid esters of various phenol derivatives were synthesized to see the effect of backbone structure on the efficiency of acid generation. The sensitivity measurement of resists containing these sulfonates indicates that the number of sulfonyloxy groups bonded to a benzene ring is important. The higher number of the sulfonyloxy groups gives a higher efficiency of acid generation.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760322012
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  • 9
    Electronic Resource
    Electronic Resource
    ARCOR, a new photolithography technique with antireflective coating on resist (1992)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 32 (1992), S. 1545-1549 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The multiple interference effect is one of the major causes of the fluctuation in critical dimension control (CD) and in mark detection for alignment. Suppressing this effect is critical for future photolithography. We propose a new photolithography technique called anti reflective coating on resist (ARCOR), which improves linewidth accuracy and overlay accuracy by suppressing multiple interference. ARCOR consists of relatively simple processes: A clear antireflective film is spun onto the resist prior to the mark detecting for alignment and exposure. The film is subsequently removed and the resist developed in the conventional way. ARCOR differs from ARC, which suppresses the reflection at the resist/substrate interface. ARCOR suppresses the reflection at the air/resist interface. ARCOR allows mark detection and exposure without light intensity-loss and multiple interference. The experiments mainly examine polysiloxane and perfluoroalkylpolyether as ARCOR materials. It is shown that linewidth accuracy can be improved from 0.3 to 0.03 μm. The signal-to-noise ratio of the alignment signal is drastically improved, and the overlay error is about half that of the conventional method. ARCOR is also effective for directly measuring the reflectivity at the resist/substrate interface, which is a key parameter of the multiple interference effect and the halation. Using ARCOR and a thin resist film, the measured ratio of reflected light to incident light indicates the reflectivity at the resist/substrate interface. Because, the probe light does not reflect off the resist surface and the intensity-loss at the resist surface is suppressed. With perfluoroalkylpolyether film, the measurement error is ∼ 1.5%.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760322018
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  • 10
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    Performance of a high‐current metal vapor vacuum arc ion source (1990)
    American Institute of Physics
    Details
    Publication Date: 1990-12-01
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics
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