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Back-side SIMS profiles of dopant redistribution under silicide films (1990)

Jackman, J. A. ; Kular, A. ; Weaver, L. ; [et al.]

Chichester [u.a.] : Wiley-Blackwell

Surface and Interface Analysis 15 (1990), S. 451-453

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ISSN: 0142-2421

Keywords: Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Physics

Notes: Samples suitable for sputter depth profiling of surface films from the substrate into the film have been produced by selective removal of most of the underlying silicon substrate. This procedure, which reduces problems due to collisional mixing and redeposition of sputtered material, was accomplished by the controlled growth of a boron-rich etch-stop layer using molecular beam epitaxy followed by selective chemical etching. The usefulness of this approach has been demonstrated by studying the redistribution of As during the growth of platinum and cobalt silicides with secondary ion mass spectrometry (SIMS).

Additional Material: 2 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/sia.740150710

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