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  • Springer  (892)
  • Wiley  (180)
  • American Institute of Physics (AIP)  (39)
  • American Chemical Society (ACS)
  • 1
    Electronic Resource
    Electronic Resource
    GaAs surface reconstruction obtained using a dry process (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2035-2037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report attaining Ga-terminated (4×2) surface reconstruction on virgin GaAs substrates using a completely dry process at temperatures below the oxide sublimation temperature and without group V overpressure. The native oxides are removed with an electron cyclotron resonance hydrogen plasma treatment, followed by annealing at 500 °C in ultrahigh vacuum, which yields a reconstructed surface suitable for epitaxial overgrowth. Characterization by secondary ion mass spectroscopy and transmission electron microscopy reveals the complete removal of O, reduced C, and high structural order at the epilayer/substrate interface when this preparation method is used before molecular beam epitaxy. Annealing the substrate at a lower temperature yields a nonreconstructed surface possessing significant impurity concentrations, and leads to dislocation defects at the epilayer/substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353148
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  • 2
    Electronic Resource
    Electronic Resource
    Calculated structures for [001] symmetrical tilt grain boundaries in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2048-2056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures of [001] tilt boundaries in silicon have been systematically investigated by computer modeling, using the harmonic Keating potential to describe the interatomic forces. The full angular range of symmetrical tilt boundaries can be described in terms of linear combinations of characteristic groupings of atoms. More than one stable relaxed structure has been found for most grain boundaries. In all cases the relaxed bicrystal consists of localized groups of pure edge or 45° dislocation cores embedded in a tetrahedrally coordinated, stable structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348730
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  • 3
    Electronic Resource
    Electronic Resource
    Application of microwave detection of the Shubnikov–de Haas effect in two-dimensional systems (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7533-7542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave detection of the Shubnikov–de Haas (SdH) effect as a contact-free characterization technique for different types of two-dimensional semiconductor structures is explored in the low magnetic field region. The detection technique and the data analysis are described. The character and relevance of the single-particle relaxation time that can be detected by this technique are distinguished from the usual transport scattering time. The measured values of the carrier concentration and single-particle relaxation time agree with electrical measurements, while the problem of making contacts on the structure is avoided. Uncertainties in the analysis for the single-particle relaxation time are discussed. Cyclotron resonance, optically detected cyclotron resonance, and magneto-photoluminescence are applied as other contact-free techniques on the same samples. The results and suitability of these techniques are compared with the microwave detection of the SdH effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354001
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  • 4
    Electronic Resource
    Electronic Resource
    Rotational structure in an excited vibronic band of the dipole-supported state of cyanomethyl anion, CH2CN− (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 68-73 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Previous reports of threshold resonances occurring in the photodetachment spectra of molecular anions have provided detailed information about the nature of dipole-supported states and the dynamics of autodetachment from the vibrationless level. In this paper we report the first observation and analysis of rotational band structure in an excited vibrational level of a dipole-supported state. The 1 cm−1 resolution laser photodetachment spectrum of cyanomethyl anion (CH2CN−), the conjugate base of acetonitrile, was recorded in the 12 500–13 700 cm−1 region using ion cyclotron resonance spectrometry. Rotational assignment of the resonances occurring in this region provides evidence for vibrational-to-electronic coupling in the autodetachment process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456468
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  • 5
    Electronic Resource
    Electronic Resource
    Electron impact ionization cross sections of SiF2 (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4042-4047 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF2 from threshold to 200 eV. A fast (3 keV) neutral beam of SiF2 is formed by charge transfer neutralization of SiF+2 with Xe; it is primarily in the ground electronic state with about 10% in the metastable first excited electronic state (a˜ 3B1). The absolute cross section for ionization of the ground state by 70 eV electrons to the parent SiF+2 is 1.38±0.18 A(ring)2. Formation of SiF+ is the major process with a cross section at 70 eV of 2.32±0.30 A(ring)2. The cross section at 70 eV for formation of the Si fragment ion is 0.48±0.08 A(ring)2. Ion pair production contributes a significant fraction of the positively charged fragment ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454837
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  • 6
    Electronic Resource
    Electronic Resource
    Electron-impact ionization cross sections of the SiF3 free radical (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4035-4041 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute cross sections for electron-impact ionization of the SiF3 free radical from threshold to 200 eV are presented for formation of the parent SiF+3 ion and the fragment SiF+2, SiF+, and Si+ ions. A 3 keV beam of SiF3 is prepared by near-resonant charge transfer of SiF+3 with 1,3,5-trimethylbenzene. The beam contains only ground electronic state neutral radicals, but with as much as 1.5 eV of vibrational energy. The absolute cross section for formation of the parent ion at 70 eV is 0.67±0.09 A(ring)2. At 70 eV the formation of SiF+2 is the major process, having a cross section 2.51±0.02 times larger than that of the parent ion, while the SiF+ fragment has a cross section 1.47±0.08 times larger than the parent. Threshold measurements show that ion pair dissociation processes make a significant contribution to the formation of positively charged fragment ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454836
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  • 7
    Electronic Resource
    Electronic Resource
    An instrument for measuring circular dichroism simultaneously at all wavelengths in a limited spectral range (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1912-1915 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An instrument is described for the simultaneous measurement of circular dichroism at all wavelengths in a limited spectral range. A polychromator and a charge-coupled device (CCD), serving as multichannel sensor, are arranged behind the sample cell, which is located close to the entrance slit, in contrast to the arrangement of a monochromator before the cell and using a photomultiplier as radiation detector, as usual until now. The CCD with low-noise electronics is driven by the system clock of a microprocessing unit controlled by a quartz oscillator and works fully synchronously with modulation and acquisition cycles. This leads to a high suppression of noise and systematic deviations. An electro-optic modulator with approximately rectangular excitation voltage is used. Partial CD spectra over the range of 80 nm each down to 200 nm have been recorded. The detection of a smaller amount of substance is possible than with other modern commercial instruments such as a JASCO J-600, with the same signal-to-noise ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142391
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  • 8
    Electronic Resource
    Electronic Resource
    Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3786-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic Ga1−xInxN/GaN single heterostructures in the composition range 0〈x〈0.2 have been investigated by photoreflectance and photoluminescence spectroscopy. Strong Franz–Keldysh oscillations near the band gap of the ternary film are observed and attributed to a large constant piezoelectric field of up to 0.63 MV/cm. This allows an accurate determination of the electric field. A significant redshift between the optical band gap from photoreflectance and the luminescence maximum is observed. Luminescence is proposed to originate in the indirect transitions between the electric field tilted band edges in GaInN. The presence of this field is expected to dominate the bandstructure and the recombination and transport processes in strained nitride structures. We find no evidence for large inhomogeneities or phase separation in this material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369749
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  • 9
    Electronic Resource
    Electronic Resource
    Design and construction of a nanoelectrospray ion source for a triple quadrupole mass spectrometer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2257-2261 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design and construction of a nanoelectrospray ion source for a triple quadrupole mass spectrometer that is used for identification and analysis of minimum peptide amounts is described. This interface exhibits several improvements over commercially available devices: a new capillary holder that allows very simple loading and placement of the spray capillary, and a rotary stage that enables reproducible adjustment of the capillary's angle at the orifice of the mass spectrometer. We also introduced a pressure-regulating system for fast and reproducible adjustment of the static backing air pressure onto the sample solution in the spray capillary. Furthermore, an electric safety circuit increases handling and operation safety of the nanoelectrospray interface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149749
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  • 10
    Electronic Resource
    Electronic Resource
    Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5404-5411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Fe3−xSi1+x films have been grown on Si(111) by codeposition at room temperature. Their structural and electronic properties have been investigated by means of low-energy electron diffraction (LEED), x-ray photoelectron diffraction (XPD), and x-ray photoemission spectroscopy (XPS). These films, with compositions ranging from Fe3Si to FeSi, exhibit a (1×1) LEED pattern. Both XPD and core level binding energy measurements indicate that single Fe3−xSi1+x phases (with 0〈x〈1), without bulk counterpart, can be stabilized by epitaxy on Si(111). The XPD experiment clearly shows that these Fe3−xSi1+x (0≤x≤1) films adopt the same cubic structure. Furthermore, the Si 2p, Fe 2p3/2, and Fe 3s core levels are slightly shifted to higher binding energies resulting from chemical effects and differences in local coordination when going from Fe3Si (DO3) to FeSi (CsCl). Multiplet splittings ΔE3s are observed in Fe 3s core-level XPS spectra for all Fe3−xSi1+x compounds except the FeSi (CsCl) one. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359721
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