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  • 1
    Digitale Medien
    Digitale Medien
    Unique x-ray diffraction pattern at grazing incidence from misfit dislocations in SiGe thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 89-96 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Grazing-incidence x-ray diffraction (GIXD) permits the direct measurement of in-plane lattice parameters of SiGe films that are too thin to yield good results from normal-geometry triple-axis techniques. A unique "X''-shaped pattern has been seen in H–K reciprocal space maps of diffracted x-ray intensity from SiGe films that have relaxed via a modified Frank–Read mechanism. Contours of intensity are seen along the 〈110〉 directions from the (4¯00) reciprocal lattice peak with the introduction of the first dislocations. For higher dislocation densities the X-shaped contours are anisotropically distorted and a satellite peak, corresponding to the lattice parameter for a partially relaxed film, becomes identifiable at lower H. In contrast, H–K reciprocal-space contours from thin SiGe films that have relaxed by roughening and subsequent random nucleation of dislocations display broad, oval-shaped contours centered at the (4¯00) reciprocal lattice point for the film. Numeric simulations of GIXD from a variety of dislocation arrangements were performed in order to understand the origin of the X pattern. We show that this pattern arises from an array of long misfit dislocations running in the 〈110〉 directions. The anisotropic distortion of the X pattern arises at higher dislocation densities from orthogonal intersections of dislocations with equal Burgers vector, which are characteristic of dislocation networks generated by the modified Frank–Read mechanism. We also verify that the measured values of the in-plane lattice parameter, together with the out-of-plane lattice parameter determined from the symmetric (004) reflection, lead to accurate calculation of the composition and strain in these SiGe layers. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362776
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  • 2
    Digitale Medien
    Digitale Medien
    Free-carrier absorption of Hg1−xCdxTe epitaxial films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7738-7742 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Free-carrier absorption (FCA) of Hg1−xCdxTe epitaxial films is analyzed by considering the composition-in-depth nonuniformity of epilayers. The results show that epilayers exhibit different FCA behavior from bulk materials. Based on the analyses, the carrier concentration, the density and size distribution of Te precipitates, as well as the inclusion in Hg1−xCdxTe epilayers are derived from fitting the measured FCA spectra. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362342
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  • 3
    Digitale Medien
    Digitale Medien
    Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1250-1254 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We introduce the flatband magnetocapacitance measurement to study magnetotransport properties in bulk semiconductors. This method is better, in some cases, than the Hall measurement because it can avoid some problems inherent to the latter method, such as the influence of the surface conducting layer, the carrier mobility, and the sample geometry correction factor. By using this experimental method some interesting phenomena concerning magnetotransport properties in an n-type InSb sample were observed, including Shubnikov–de Haas oscillations, resonant defect states, conduction process transitions, and the metal–insulator phase transition. The experimentally determined magnetotransport properties for the InSb sample are compared with those reported in literature. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363866
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  • 4
    Digitale Medien
    Digitale Medien
    Hole subband in p-type channel of semiconductor heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7998-8000 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Based on the characteristics of semiconductor surface capacitance, an experimental model is presented for evaluating the hole subband structures in the p-type channel of semiconductor heterostructures. For an n-type InSb metal-oxide-semiconductor sample, the capacitance-voltage spectroscopy is measured and the hole subband structure is derived with using the model presented. The result shows that the Fermi level is always pinned near the bottom of the hole subband, which is attributed to the large density of states of the hole subband. Relevant parameters are also obtained for the hole subband including the subband energy, Fermi level, inversion layer width, and depletion layer width, etc. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357914
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  • 5
    Digitale Medien
    Digitale Medien
    The effect of chemical stresses on diffusion (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2823-2829 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of chemical stresses on diffusion has been investigated. A thin plate of isotropic material with boundary conditions of constant surface chemical potential and constant surface stresses is considered. If there is no rotation in the isotropic solid, the effective diffusivity arising from the chemical stresses is proportional to the concentration. The chemical stresses enhance the mass transfer because of increasing diffusivity. The initial surface concentration may differ from the final surface concentration for the constant surface chemical potential.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356174
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  • 6
    Digitale Medien
    Digitale Medien
    Measurements of alloy composition and strain in thin GexSi1−x layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8098-8108 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The utility of Raman spectroscopy for the simultaneous determination of composition and strain in thin GexSi1−x layers has been investigated. Using data from the literature and new data for the strain shift of the Si-Si phonon mode presented here, we show how Raman spectra provide several different means of measuring composition and strain in samples as thin as 200 A(ring). We demonstrate that for largely relaxed layers with compositions near x=0.30, Raman scattering can measure the composition, x, with an accuracy of ±0.015 and the strain, ε, with an accuracy ±0.0025. The accuracy of the alloy composition obtained from Raman spectra is comparable or, in the case of very thin layers, superior to that measured by other techniques such as x-ray diffraction, electron microprobe, and Auger electron spectroscopy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356554
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  • 7
    Digitale Medien
    Digitale Medien
    Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3608-3610 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Based on the capacitance–voltage (CV) characteristics of semiconductor metal-insulator- semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361378
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  • 8
    Digitale Medien
    Digitale Medien
    A normal incidence two-color p-type compressive strained-layer In0.4Ga0.6As/GaAs quantum well infrared photodetector for 3–5 μm and 8–12 μm detection (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6009-6011 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A normal incidence p-type compressive strained-layer In0.4Ga0.6As/GaAs quantum well infrared photodetector (PSL-QWIP) grown on (100) semi-insulting GaAs substrate with molecular beam epitaxy technique for 3–5 μm mid-wavelength infrared and 8–14 μm long-wavelength infrared detection was demonstrated for the first time. This PSL-QWIP shows a broadband double-peak response between 8 and 9 μm wavelength by utilizing the resonant transport coupling mechanism between the heavy-hole type-I states and the light-hole type-II states. Using the compressive strain in the InGaAs quantum well, normal incident absorption was greatly enhanced by reducing the heavy-hole effective mass and increasing density of states of off-zone center. Maximum responsivities of 93 mA/W and 30 mA/W were obtained at peak wavelengths of λp1=8.9 μm and λp3=5.5 μm, respectively, with Vb=1.6 V. Detectivity at λp1=8.9 μm was found to be 4.0×109 cm(square root of)Hz/W at Vb=0.3 V and T=75 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358352
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  • 9
    Digitale Medien
    Digitale Medien
    Composition and temperature dependence of the refractive index in Hg1−xCdxTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4176-4179 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The intrinsic absorption spectra for very thin Hg1−xCdxTe bulk samples with compositions x ranging from 0.276 to 0.443 have been obtained at different temperatures. Based on the measured absorption curves and Kramers–Kronig relation, the refractive index dispersion has been calculated in the wavelength region near and below the band gap at temperatures from 4.2 to 300 K. For Hg1−xCdxTe samples with x from 0.276 to 0.443, the dispersion relation can be described by an empirical formula: n(λ,T)2=A+B/[1−(C/λ)2]+Dλ2, where the parameters A, B, C, and D are both temperature and composition dependent. In addition, a peak in the deduced dispersion spectra appears just at the wavelength corresponding to the band-gap energy Eg(x,T) of Hg1−xCdxTe.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356001
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  • 10
    Digitale Medien
    Digitale Medien
    Nucleation of dislocations in SiGe layers grown on (001)Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3968-3977 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A comprehensive x-ray-diffraction study of the variation of the tilt angle between a Si1−xGex layer and the (001) Si substrate is presented. Such measurements provide the basis of a new method for determining the nucleation activation energy of misfit dislocations. A detailed model, independent of the particular relaxation mechanism, is derived which relates the tilt angle to the nucleation activation energy on the different slip systems and to the density of misfit dislocations. The model has been applied to the modified Frank–Read mechanism observed in graded samples. Relaxation occurs in such samples for strain in the range 0.002≤ε≤0.006 with an activation energy of about 4 eV. The critical thickness for growth of a strained layer is shown to be smaller when the substrate is miscut than when it is well oriented.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356992
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