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  • 1
    Electronic Resource
    Electronic Resource
    The effects of arsenic source contamination on doped GaAs grown by MBE (1984)
    Springer
    Applied physics 35 (1984), S. 75-77 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.Fw ; 81.15.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The presence of parts per million (ppm) levels of impurities in the low-temperature arsenic charge used in molecular beam epitaxy (MBE) is shown to have a dramatic effect on the quality of GaAs grown. Source charge impurities play a vital role in determining the apparent variation in reported doping behaviour in MBE:GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620633
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation and thermal annealing effects on native and ion-irradiated PbTe films grown by molecular beam deposition (1985)
    Springer
    Applied physics 37 (1985), S. 145-151 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Jh ; 73.60.Fw ; 82.65−i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Investigations are reported into the effect of low-pressure oxygen exposure and thermal annealing on the carrier transport properties of native and 350 eV Ar+ bombarded PbTe films. The electrical measurements were madein situ on MBD-grown PbTe films without breaking vacuum. On native surfaces, oxidation was initially sustained by diffusion of a donor species from the film bulk to the surface, where reaction with oxygen occured. This diffusion process was apparently inhibited on ion irradiated films and direct doping of the film surface effected a gradual reduction in the ion-induced electron accumulation resident at the film surface. The native properties and behavioural characteristics of the films could be recovered by thermal annealing of the ion-irradiated and/or oxidized films at 300–350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617499
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  • 3
    Electronic Resource
    Electronic Resource
    A study of structural perfection of interfaces in Si/SiGe superlattices (2000)
    Springer
    Crystallography reports 45 (2000), S. 661-669 
    Details
    ISSN: 1063-7745
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecular-beam epitaxy at different temperatures of the Si substrate has been carried out by high-resolution X-ray diffraction analysis, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). It is demonstrated that the combination of these methods makes it possible to describe in sufficient detail the distributions of the strains and Ge concentrations in the elastically strained superlattices and also to evaluate the sharpness of the layer interfaces. It is shown that the densitometry of electron microscope images of the superlattice cross-sections permits characterization of the relative sharpness of the layer interfaces and a qualitative representation of the Ge distribution throughout the thickness of the SiGe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1306580
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  • 4
    Electronic Resource
    Electronic Resource
    Silicon-germanium heterostructures — advanced materials and devices for silicon technology (1995)
    Springer
    Journal of materials science 6 (1995), S. 249-264 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The continuing massive investment in silicon technology and the unique physical and chemical properties of the Si-SiO2 system will ensure the dominance of silicon in microelectronics well into the 21st century. This momentum stimulates development of new materials which should further enhance the performance of silicon microelectronic circuitry. Such materials must, however, be compatible with silicon processing technologies. Major advances in silicon technology are now in prospect due to breakthroughs in molecular beam epitaxy (MBE) growth which have occurred over the last decade and which have enabled silicon to be alloyed to its nearest neighbours in the periodic table — Ge, C, and Sn. The Si/Si1−xGex heteroepitaxial material system in particular is emerging as a strong candidate to form a silicon-based heterojunction technology. The incorporation of thin, strained, (pseudomorphic) layers of Si1−xGex in silicon allows significant valence band and conduction band edge misalignments to be realized along with appreciable reductions in bandgap energies. Bandgap engineering-such a powerful tool for modifying semiconducting properties (and previously the reserve of compound semiconductors) — thus becomes accessible to the mainstream microelectronics material. This review considers the dramatic impact SiGe could have on future silicon microelectronics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00125880
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of Si-Si1−xGex and Si-Ge nanostructures (1995)
    Springer
    Journal of materials science 6 (1995), S. 356-362 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper reviews the current research status on the optical properties of Si-Si1−xGex and Si-Ge nanostructures. Although this is a relatively new field, existing research has already achieved promising results in terms of both physics and possible device applications including the effect of process-induced strain in nanostructures, quantum confinement and improved optical efficiency of collective excitation in wires with reduced dimension, and especially the huge improvement of optical efficiency in quantum dots after nanofabrication. These results potentially open a new field of research into both the physics of Si-Si1−xGex nanostructures and the possible applications of them in cheap Si based optoelectronic industry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00125892
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  • 6
    Electronic Resource
    Electronic Resource
    The morphology and electrical properties of heteroepitaxial InAs prepared by MBE (1984)
    Springer
    Applied physics 35 (1984), S. 61-66 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 72.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An investigation of the growth of heteroepitaxial InAs by MBE is reported. The surface morphology and electrical properties are shown to be critically dependent on growth parameters and the conditions necessary to obtain good material quality are deduced. Analysis of the thickness dependence of the electrical properties of undoped, and Si- or Te-doped InAs shows that interfacial effects contribute to the measured properties. Material remote from the interfacial region compares favourably with VPE- and bulkgrown InAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620301
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  • 7
    Electronic Resource
    Electronic Resource
    Oxygen and monatomic hydrogen interactions with PbTe film surfaces prepared by molecular-beam deposition (1986)
    Springer
    Applied physics 40 (1986), S. 7-12 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.Fw ; 61.70.Tm ; 82.65-i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects on the electrical properties and surface composition of molecular-beam-deposited PbTe films to exposure by oxygen and monatomic hydrogen were investigated. Three stages of oxidation have been identified, depending on the pressure regime employed. Characteristic differences in the response of each of the three oxides to thermal annealing, electron irradiation during Auger analysis and to monatomic hydrogen exposure were observed. The kinetics of n-type doping by monatomic hydrogen, and its reversibility under ultra-high vacuum and oxygen-exposure conditions are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616585
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  • 8
    Electronic Resource
    Electronic Resource
    Coevaporation phosphorus doping in Si grown by molecular beam epitaxy (1986)
    Springer
    Applied physics 41 (1986), S. 233-235 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.Fw ; 81.15Ef ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Phosphorus-doped Si epilayers with bulk-like mobilities were grown by molecular beam epitaxy (Si-MBE) by coevaporation of phosphorus from a tin phosphide source. The behaviour of P doping as a function of growth parameters and of “potential enhanced doping” indicates a non-unity, almost growth-temperature independent incorporation efficiency with negligible surface segregation -a unique combination among coevaporated dopants in Si-MBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616844
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  • 9
    Electronic Resource
    Electronic Resource
    The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE) (1987)
    Springer
    Applied physics 42 (1987), S. 197-200 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620599
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  • 10
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    The morphology and electrical properties of heteroepitaxial InAs prepared by MBE (1984)
    Springer
    Details
    Publication Date: 1984-09-01
    Print ISSN: 0947-8396
    Electronic ISSN: 1432-0630
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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