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  • 1
    Electronic Resource
    Electronic Resource
    Hot-Carrier degradation of the Random Telegraph Signal amplitude in submicrometer Si MOSTs (1993)
    Springer
    Applied physics 57 (1993), S. 283-289 
    Details
    ISSN: 1432-0630
    Keywords: 85.30.Tv ; 72.70.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper studies the Hot-Carrier (HC) degradation of submicrometer Si MOSTs by the changes in the Random Telegraph Signal (RTS) parameters. It is demonstrated that the amplitude of a pre-existing RTS is markedly changed after stress. In linear operation, a reduction is generally observed for n-MOSTs, while an increase is found for p-MOSTs. For larger drain voltages, the changes are most pronounced in reverse operation, i.e. with source and drain switched, for a forward stress. Hence, the trap-amplitude asymmetry increases after stress. As is demonstrated, there exists a close correlation between the observed changes in the RTS amplitude and in the static device parameters. A simple, first-order model is derived, showing that the HC stress-induced reduction (n-channel), or increase (p-channel) is proportional to the variation of the oxide/interface charge density near the drain. Alternatively, it is demonstrated that the normalized change in the RTS amplitude is equal to the normalized conductance change of the narrow hot-carrier damaged region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332604
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density (2000)
    Springer
    Applied physics 70 (2000), S. 345-353 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 72.70.m; 72.20.Jv; 85.30.Tv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. In this paper, the impact of the substrate bias U BS on the parameters of a repulsive random telegraph signal in an n-channel metal-oxide-semiconductor field-effect transistor is studied. Particular attention is paid to the variation of the capture time constant τc with the channel current I in linear operation. It is shown that the strong reduction of τc with I can be explained by the Coulomb blockade effect. The corresponding Coulomb energy ΔE of the charged-near-interface oxide trap is shown to be a strong function of the substrate bias. From the analysis of the experimental results considering surface quantization effects follows that the variation of ΔE with U BS is caused by the change in both the inversion layer surface charge density N s and in the surface electric field F s that influences the distance between the centroid of the inversion layer and the interface. In fact, it will be demonstrated that ΔE can be expressed in function of a single parameter (N s F s 2). Finally, the impact of the substrate bias on the other parameters, i.e., the amplitude ΔI, the emission time constant τe and the distance d of the trap from the interface, will also be addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050058
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  • 3
    Electronic Resource
    Electronic Resource
    Radiation damage of In0.53Ga0.47As photodiodes by high energy particles (1999)
    Springer
    Journal of materials science 10 (1999), S. 403-405 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The performance degradation of In0.53Ga0.47As p-i-n photodiodes, subjected to a 220-MeV carbon particle irradiation in the fluence range 1010 to 1013 cm−2, is reported. It is shown that the increase of the dark current scales roughly with the displacement damage created in the n-type InGaAs region. The degradation of the photo-current, on the other hand, does not scale with the displacement damage, for all irradiations studied. Therefore, it is believed that the photo-current suffers from increased surface recombination, which is related to the ionization damage created in the passivation layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008909826332
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  • 4
    Electronic Resource
    Electronic Resource
    Impact of high energy particle irradiation on the electrical performance of Si1−x Ge x epitaxial diodes (1999)
    Springer
    Journal of materials science 10 (1999), S. 335-337 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The impact of 20-MeV alpha ray irradiation on the electrical characteristics of strained-layer epitaxial Si1−x Ge x diodes is investigated as a function of fluence and Ge content (x = 0.08, 0.12 and 0.16). The reverse current at a fixed bias increases with fluence, although the rate of increase decreases with increasing fluence and/or Ge content. The reduction of the capacitance with fluence points to a strong deactivation of the boron (B) dopant atoms, which decreases with increasing Ge content. The close to square root dependence between the B-deactivation and the reverse current increase, suggests that in the irradiated diodes the latter is dominated by deep levels associated with interstitial B complexes. This is confirmed by deep level transient spectroscopy, revealing that the trap introduction rate at a given fluence reduces with increasing Ge content, similar to that for the reverse diode current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008937204950
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  • 5
    Electronic Resource
    Electronic Resource
    On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs (1994)
    Springer
    Applied physics 58 (1994), S. 353-358 
    Details
    ISSN: 1432-0630
    Keywords: 85.30.Tv ; 72.70.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The experimental gate- (V GS) and drain-voltage (V DS) dependence of the fractional Random Telegraph Signal (RTS) amplitude ΔI D/I D, obtained on a large series of submicron Metal-Oxide Semiconductor Transistors (MOSTs), is reported. The observed variation of the RTS amplitude in linear operation is discussed in view of recently published models. As will be shown, the large spread in weak-inversion amplitudes can only be explained by taking into account the microscopic nature of the oxide trap and its environment. The position of a trap along the channel can in principle be retrieved from studying the so-called RTS amplitude asymmetry, defined as the V DS dependence of the amplitude in both normal and reverse operation of the transistor. Widely different asymmetry behaviour is observed in this work. Here, a qualitative model will be derived which gives a more refined analysis and offers some deeper insight than existing theories. However, to fully understand the RTS amplitude in weak inversion, more microscopic detail is needed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323609
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  • 6
    Electronic Resource
    Electronic Resource
    Factors determining the lifetime damage coefficients and the low-frequency noise in MeV proton irradiated silicon diodes (1999)
    Springer
    Journal of radioanalytical and nuclear chemistry 239 (1999), S. 207-211 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract The impact of several factors, related to the doping density, the substrate type and the thermal pre-treatment on the proton radiation damage coefficients of Si diodes is discussed and verified experimentally. The diode parameters investigated are the leakage current density, the recombination lifetime and the low-frequency noise current spectral density. Proton irradiations have been performed in the energy range 10 MeV to 100 MeV and in the fluence range of 5·109 to 4·1011 cm−2, typical for space applications. The obtained coefficients are compared with theoretical NIEL predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02349558
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  • 7
    Electronic Resource
    Electronic Resource
    Radiation damage in Si1−x Ge x heteroepitaxial devices (1999)
    Springer
    Journal of radioanalytical and nuclear chemistry 239 (1999), S. 351-355 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Results are presented of an extended study on the induced lattice defects and their effects on the degradation of Si1−x Ge x devices, subjected to a 20 MeV alpha-ray, 1 MeV electron, 1 MeV fast neutron, and 20 and 86 MeV proton irradiations. The degradation of the electrical device performance increase with increasing fluence, while it decreases with increasing germanium content. In the Si1−x Ge x epitaxial layers, electron capture levels associated with an interstitial-substitutional boron complex are induced. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02349510
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  • 8
    Electronic Resource
    Electronic Resource
    Degradation of MOSFETs on SIMOX by irradiation (1999)
    Springer
    Journal of radioanalytical and nuclear chemistry 239 (1999), S. 357-360 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Results are presented of a study on the degradation and recovery of the electrical performance of MOSFETs processed on SIMOX substrates, subjected to 1 and 2 MeV electron and to 20 MeV alpha-ray irradiations. The damage coefficient for alpha-ray irradiation is about three orders of magnitude larger than the one for electron irradiation, which is attributed to the difference of incident particle mass and the possibility of nuclear collision during radiation damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02349511
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of irradiation in InGaAs photo devices (1999)
    Springer
    Journal of radioanalytical and nuclear chemistry 239 (1999), S. 361-364 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Results are presented of an extended study on the degradation of electrical and optical performance and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to a 20 MeV alpha-ray irradiation. The difference in radiation damage with 1 MeV fast neutrons and 1 MeV electrons is discussed taking into account the energy transfer. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02349512
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  • 10
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    Influence of the substrate voltage on the random telegraph signal parameters in submicron n -channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density (2000)
    Springer
    Details
    Publication Date: 2000-03-01
    Print ISSN: 0947-8396
    Electronic ISSN: 1432-0630
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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