ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The impact of 20-MeV alpha ray irradiation on the electrical characteristics of strained-layer epitaxial Si1−x Ge x diodes is investigated as a function of fluence and Ge content (x = 0.08, 0.12 and 0.16). The reverse current at a fixed bias increases with fluence, although the rate of increase decreases with increasing fluence and/or Ge content. The reduction of the capacitance with fluence points to a strong deactivation of the boron (B) dopant atoms, which decreases with increasing Ge content. The close to square root dependence between the B-deactivation and the reverse current increase, suggests that in the irradiated diodes the latter is dominated by deep levels associated with interstitial B complexes. This is confirmed by deep level transient spectroscopy, revealing that the trap introduction rate at a given fluence reduces with increasing Ge content, similar to that for the reverse diode current.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008937204950
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