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  • Public Library of Science  (76)
  • American Institute of Physics (AIP)
  • 1
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    The process of EDC-NHS cross-linking of reconstituted collagen fibres increases collagen fibrillar order and alignment (2014)
    American Institute of Physics (AIP)
    Details
    Publikationsdatum: 2014-11-06
    Beschreibung: We describe the production of collagen fibre bundles through a multi-strand, semi-continuous extrusion process. Cross-linking using an EDC (1-ethyl-3-(3-dimethylaminopropyl)carbodiimide), NHS (N-hydroxysuccinimide) combination was considered. Atomic Force Microscopy and Raman spectroscopy focused on how cross-linking affected the collagen fibrillar structure. In the cross-linked fibres, a clear fibrillar structure comparable to native collagen was observed which was not observed in the non-cross-linked fibre. The amide III doublet in the Raman spectra provided additional evidence of alignment in the cross-linked fibres. Raman spectroscopy also indicated no residual polyethylene glycol (from the fibre forming buffer) or water in any of the fibres.
    Digitale ISSN: 2166-532X
    Thema: Maschinenbau
    Publiziert von American Institute of Physics (AIP)
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  • 2
    Digitale Medien
    Digitale Medien
    A low threshold, room temperature 1.64 μm Yb:Er:Y3Al5O12 waveguide laser (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7651-7653 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Room temperature 1.64 μm laser operation of Yb:Er:Y3Al5O12 has been achieved using a planar waveguide grown by liquid phase epitaxy. A comparatively low threshold of 17 mW was achieved for this transition indicating low waveguide propagation loss for this material and suggesting good prospects for low threshold 3 μm and upconversion visible lasers based on this system. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357939
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  • 3
    Digitale Medien
    Digitale Medien
    High-resolution x-ray spectrometer based on spherically bent crystals for investigations of femtosecond laser plasmas (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 4049-4053 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Ultrashort-pulse, laser-produced plasmas have become very interesting laboratory sources to study spectroscopically due to their very high densities and temperatures, and the high laser-induced electromagnetic fields present. Typically, these plasmas are of very small volume and very low emissivity. Thus, studying these near point source plasmas requires advanced experimental techniques. We present a new spectrometer design called the focusing spectrometer with spatial resolution (FSSR-2D) based on a spherically bent crystal which provides simultaneous high spectral (λ/Δλ(approximate)104) and spatial resolution ((approximate)10 μm) as well as high luminosity (high collection efficiency). We described in detail the FSSR-2D case in which a small, near point source plasma is investigated. An estimate for the spectral and spatial resolution for the spectrometer is outlined based on geometric considerations. Using the FSSR-2D instrument, experimental data measured from both a 100 fs and a nanosecond pulse laser-produced plasma are presented. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1149249
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  • 4
    Digitale Medien
    Digitale Medien
    Ultrafast x-ray streak camera for use in ultrashort laser-produced plasma research : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 719-721 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: In recent years there has been growing interest in energetic ((approximately-greater-than)100 eV), temporally short (〈10 ps) x rays produced by ultrashort laser-produced plasmas. The detection and temporal dispersion of the x rays using x-ray streak cameras has been limited to a resolution of 2 ps, primarily due to the transit time dispersion of the electrons between the photocathode and the acceleration grid. The transit time spread of the electrons traveling from the photocathode to the acceleration grid is inversely proportional to the accelerating field. By increasing the field by a factor of 7, we have minimized the effects of transit time dispersion in the photocathode/accelerating grid region and produce an x-ray streak camera with subpicosecond temporal resolution (≈900 fs). The streak camera has been calibrated using a Michelson interferometer and 100 fs, 400 nm laser light. The characteristics of the streak camera, along with the most recent x-ray streak data will be presented. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146269
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  • 5
    Digitale Medien
    Digitale Medien
    Charge and mass resolved time of flight observations of 140 fs laser produced ions : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 333-335 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Ions from this plasma are self-extracting with energies of 0.1 to 100 keV, the extraction potential being one of the desired observables. The charge/mass (z/μ, μ is mass in AMU) separation is provided by a static magnetic field (B⋅L=1280 G cm, FWHM=14 mm) located 5 cm from the linear (1−d) detector. Displacement along the detector axis is thus proportional to z/μ(1/v). The detector is a gold cathode MCP with a fast (sub-ns) phosphor. The phosphor output is coupled into a streak camera (typical sweep 8.5 or 24 μs total) through a coherent fiber bundle. Streak images are grabbed with a 14-bit CCD. The signature of any specific ion is a straight line of slope proportional to z/μ. Since there are usually more than one charge state of a given ion, integer multiple slopes appear. Thus z and m can be found. Absolute calibration is taken from the slope of the proton streak, which is always present with our plasmas. While providing the same information as a Thomson parabola, the straight line images are easier to extract information from and offer resolution with less energy dependence. By providing mass and time of flight information, the product of z⋅Te can be determined unambiguously during the hydrodynamic acceleration of the plasma. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146404
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  • 6
    Digitale Medien
    Digitale Medien
    Pixel array detector for time-resolved x-ray scattering : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3360-3360 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: This paper describes the development of a large area hybrid pixel detector designed for time-resolved synchrotron x-ray scattering experiments in which limited frames, with a high framing rate, are required. The final design parameters call for a 1024×1024 pixel array device with 150-micron pixels that is 100% quantum efficient for x-rays with energy up to 20 keV, with a framing rate in the microsecond range. The device will consist of a fully depleted diode array bump bonded to a CMOS electronic storage capacitor array with eight frames per pixel. The two devices may be separated by a x-ray blocking layer that protects the radiation-sensitive electronics layer from damage. The signal is integrated in the electronics layer and stored in one of eight CMOS capacitors. After eight frames are taken, the data are then read out, using clocking electronics external to the detector, and stored in a RAM disk. Results will be presented on the development of a prototype 4×4 pixel electronics layer that is capable of storing at least 10,000 12-keV x-ray photons for a capacity of over 50 million electrons with a noise corresponding to 2 x-ray photons per pixel. The diode detective layer and electronics storage layer along with the radiation damage and blocking layers will be discussed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1147389
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  • 7
    Digitale Medien
    Digitale Medien
    Secondary ion mass spectrometry and electrical characterization of Zn diffusion in n-type InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 605-610 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Zn diffusion in InP has been investigated in two configurations: diffusion from an external source into uniformly n-doped substrates and diffusion between layers in n-p-n-p-n structures grown by metalorganic chemical vapor deposition (MOCVD). Alternating layers of p-type InP (0.5 μm, 4×1017〈[Zn]〈2×1018 cm−3) and n-type InP (0.5 μm, 1016〈[Si]〈3×1019 cm−3) were grown by low-pressure MOCVD at T=625 °C. The distribution of Si and Zn was determined by secondary ion mass spectrometry, using implanted standards to calibrate the data. For undoped spacer layers (n∼1016 cm−3) the diffusion profiles depended strongly on the Zn-doping level; little out-diffusion of Zn was observed for [Zn]=4×1017 cm−3, but for [Zn]〉1018 cm−3, the Zn completely diffused across the spacer layers during growth (1–2 h). For doped spacer layers, the doping level (Si) had a dramatic effect on the Zn diffusion profiles. The total Zn diffusion across the grown dopant interface was not substantially affected, but an accumulation of Zn took place in the Si-doped layers, with the formation of Zn spikes, for which the increase in Zn level, as compared to that in the Zn-doped layer (∼1018 cm−3) was similar to [Si]. No diffusion of Si across the grown dopant interface was detected. Electrochemical C-V profiling indicated that the Si and Zn were electrically active. The results have been explained in terms of a model in which mobile Zn species diffusing into the Si-doped layers are immobilized by the formation of Zn-donor pairs. The model is shown to be consistent with diffusion profiles obtained for diffusion of Zn into n-InP from an external ZnGaCdIn source. The effect of this diffusion on as-grown junctions, is to displace the location of the junction. These results can have important consequences for device fabrication.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343525
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  • 8
    Digitale Medien
    Digitale Medien
    Characterization of ion implanted waveguides in Nd:YAG (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3440-3446 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ion implantation into Nd:YAG has been used to produce waveguides which are capable of supporting laser action. The refractive index profiles have been characterized as a function of ion dose and energy, implant temperature, and subsequent thermal annealing. Transmission losses down to 1.2 dB/cm have been obtained in the optimized waveguides. There is a temperature independent index enhancement of ∼0.15% in the electronic stopping (guiding) region. The nuclear collision damage is temperature dependent, and shows an initial index increase (∼0.3% for dose 1 × 1016 ions/cm2), but a subsequent decrease of up to several percent, which forms an optical barrier, as has been observed in many other crystalline materials. The best mode confinement and attenuation is obtained by utilizing the low dose nuclear index enhancement produced by several equally spaced implants (multiple energy) to give a broad well with Δn∼0.25%. Several unusual features of the profiles are reported and discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348962
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  • 9
    Digitale Medien
    Digitale Medien
    X-ray diagnostics for ultrashort laser produced plasma experiments (abstract) : Proceedings of the 9th topical conference on high temperature plasma diagnostics (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5115-5115 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The characterization of subpicosecond laser produced plasmas is currently being investigated by the Livermore ultrashort pulse laser group. A 800-nm, 150-fs, 35-mJ laser is focused to a 7-μm spot on solid aluminum targets, producing XUV (〈1 keV), K shell (1.5–30 keV), and hard (≥3.0 keV) x-ray emission. The K-shell emission is studied using a Von Hamos crystal spectrograph with a KAP crystal curved to an 80-mm radius, resulting in a calculated resolution of E/ΔE≈400. The dispersed x rays are detected with a microchannel plate intensified reticon detector which relays the images out of the chamber and displayed on a computer monitor. The hard x rays are monitored with an array of filter x-ray diodes, covering energies from 3 to 75 keV. The XUV emission is monitored with a variably spaced line grating, flat field spectrometer, and a grazing incidence spectragraph. The diagnostics will be presented along with current data from experiments. This work was performed under the auspices of the U. S. Department of Energy by Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1143456
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  • 10
    Digitale Medien
    Digitale Medien
    Chemical reaction dynamics with stochastic potentials below the high-friction limit (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 2430-2438 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Thermally activated escape over a fluctuating barrier is studied by numerical simulations of the Langevin equation. A class of merged harmonic oscillator potentials are used to model barrier fluctuations continuously over the entire domain of the dynamics. Though the friction constant in the Langevin equation is Ohmic (local), the correlation in the stochastic potentials is taken to be exponential (nonlocal) with a specified decay constant. These models have previously been restricted to the overdamped regime. In this limit, the high friction constants ensure the system's thermalization despite the additional forces acting on the system effected by the stochastic potential of mean force. To insure that equipartition is obeyed below the overdamped regime, the friction constant is modified so as to dissipate this excess energy. This phenomenological choice is exact if the fluctuations in the stochastic potential are induced by a Gaussian random force and are either uniform across the configuration space or the dynamics are determined only at the transition state. Otherwise it provides agreement with the exponent of the equilibrium distribution to second order in the inverse temperature. With this scheme, the stochastic dynamics are shown to exhibit both the Kramers turnover and resonant activation over a wide range of friction and decay constants. The zero and infinite limits of the latter are also obtained using both simulations and analytic rate formulas. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1386422
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